Annelies Delabie

发表

Atomic Layer Deposition Applications 10 : Preface

Fred Roozeboom, S. De Gendt, Annelies Delabie, 2014 .

High-k gate stack engineering : Towards meeting low standby power and high performance targets

Paul Zimmerman, Guido Groeseneken, L. Pantisano, 2005 .

Invited) Advanced Dielectrics Targeting 2X DRAM MIM Capacitors

Min-Soo Kim, Ben Kaczer, Marc Aoulaiche, 2013 .

Atomic Layer Deposition Applications 8 : Preface

Fred Roozeboom, S. De Gendt, Annelies Delabie, 2012 .

Atomic Layer Deposition Applications 9 : Preface

Fred Roozeboom, S. De Gendt, Annelies Delabie, 2013 .

Key Issues for the Development of a Ge CMOS Device in an Advanced IC Circuit

Paul Zimmerman, Eddy Simoen, Cedric Huyghebaert, 2006 .

Atomic Layer Deposition Applications 11 : Preface

Fred Roozeboom, S. De Gendt, Annelies Delabie, 2015 .

Atomic Layer Deposition Applications 6 : Preface

Fred Roozeboom, S. De Gendt, Annelies Delabie, 2010 .

Atomic Layer Deposition Applications 7 : Preface

Fred Roozeboom, S. De Gendt, Annelies Delabie, 2011 .

Electrical characteristics of Ge/GeO x (N)/HfO 2 gate stacks

Marc Heyns, Andre Stesmans, Marc Meuris, 2005 .

ALD La-Based Oxides for Vt-Tuning in High-K/Metal Gate Stacks

Christoph Adelmann, Laura Nyns, Sven Van Elshocht, 2019, ECS Transactions.

Interface control of high-k gate dielectrics on Ge

Geoffrey Pourtois, Florence Bellenger, Matty Caymax, 2008 .

Atomic Layer Deposition of Tantalum Oxide and Tantalum Silicate from Chloride Precursors

Christoph Adelmann, Bart Schepers, Geoffrey Pourtois, 2012 .

Effect of Postdeposition Anneal Conditions on Defect Density of HfO2 Layers Measured by Wet Etching

S. De Gendt, Annelies Delabie, Chao Zhao, 2004 .

Advances : From Large Scale Synthesis and Controlled Heterostructures to Improved Characterization Techniques , Defects and Applications

Iuliana Radu, Cedric Huyghebaert, Stefan De Gendt, 2016 .

Electrical Properties of III-V/Oxide Interfaces

Marc Heyns, Marc Meuris, Guy Brammertz, 2009 .

Mechanisms for the trimethylaluminum reaction in aluminum oxide atomic layer deposition on sulfur passivated germanium

Geoffrey Pourtois, Matty Caymax, Annelies Delabie, 2011 .

S-passivation of the Ge gate stack: Tuning the gate stack properties by changing the atomic layer deposition oxidant precursor

Laura Nyns, Herbert Struyf, Guy Brammertz, 2011 .

Engineering the III-V Gate Stack Properties by Optimization of the ALD Process

Aaron Thean, Jacopo Franco, Stefan De Gendt, 2014 .

Al2O3/InGaAs metal-oxide-semiconductor interface properties: impact of Gd2O3 and Sc2O3 interfacial layers by atomic layer deposition

Laura Nyns, D. Lin, Annelies Delabie, 2014 .

Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy

Wilfried Vandervorst, Stefan De Gendt, Marc Heyns, 2004 .

Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S

Iuliana Radu, Wilfried Vandervorst, Stefan De Gendt, 2017 .

Electronic structure of polyhedral carbon cages consisting of hexagons and triangles

Patrick W. Fowler, Annelies Delabie, Steven Compernolle, 2002 .

Ultrathin GeOxNy interlayer formed by in situ NH3 plasma pretreatment for passivation of germanium metal-oxide-semiconductor devices

Qi Xie, Yu-Long Jiang, Matty Caymax, 2010 .

Impact of Precursor Chemistry and Process Conditions on the Scalability of ALD HfO2 Gate Dielectrics

Stefan De Gendt, Laura Nyns, Annelies Delabie, 2010 .

Threshold Voltage Control in PMOSFETs with Polysilicon or Fully-Silicided Gates on Hf-Based Gate Dielectric Using Controlled Lateral Oxidation

Anabela Veloso, Marc Heyns, Matty Caymax, 2006 .

High-k dielectrics for future generation memory devices (Invited Paper)

Christoph Adelmann, Ben Kaczer, Dirk Wouters, 2009 .

Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide

Marc Heyns, Marc Meuris, Florence Bellenger, 2007 .

Passivation of Ge ( 100 ) ∕ GeO2 ∕ high-κ Gate Stacks Using Thermal Oxide Treatments

Marc Heyns, K. De Meyer, Marc Meuris, 2008 .

Challenges and opportunities in advanced Ge pMOSFETs

Geert Hellings, Jerome Mitard, Eddy Simoen, 2012 .

Atomic-layer-deposited tantalum silicate as a gate dielectric for III-V MOS devices

Laura Nyns, D. Lin, Matty Caymax, 2011 .

Si cap passivation for Ge nMOS applications

Aaron Thean, Nadine Collaert, Laura Nyns, 2013 .

Invited) Status and Trends in Ge CMOS Technology

Geert Hellings, Cor Claeys, Jerome Mitard, 2013 .

Enhanced initial growth of atomic-layer-deposited metal oxides on hydrogen-terminated silicon

Martin M. Frank, Annelies Delabie, Bert Brijs, 2003 .

On the Nature of Weak Spots in High-k Layers Submitted to Anneals

Wilfried Vandervorst, Olivier Richard, Annelies Delabie, 2004 .

Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge

Harold Dekkers, Annelies Delabie, G. Agostinelli, 2006 .

Reaction mechanisms for atomic layer deposition of aluminum oxide on semiconductor substrates

Geoffrey Pourtois, Matthias Mueller, Burkhard Beckhoff, 2012 .

Grazing Incidence-X-ray Fluorescence Spectrometry for the Compositional Analysis of Nanometer-Thin High-κDielectric HfO_2 Layers

David Hellin, Stefan De Gendt, Annelies Delabie, 2005, Analytical sciences : the international journal of the Japan Society for Analytical Chemistry.

Thin epitaxial si films as a passivation method for Ge(100) : Influence of deposition temperature on ge surface segregation and the high-k/Ge interface quality

Paul Zimmerman, Ben Kaczer, Wilfried Vandervorst, 2006 .