Martin Sandén

发表

A Voltage Controlled Oscillator with Automatic Amplitude Control in SiGe Technology

Fredrik Jonsson, Mikael Östling, Martin von Haartman, 2001 .

Decreased low frequency noise by hydrogen passivation of polysilicon emitter bipolar transistors

Mikael Östling, Martin Sandén, B. Gunnar Malm, 2000 .

Up-Conversion of Device 1/f Noise to Phase Noise in Voltage Controlled Oscillators

Fredrik Jonsson, M. Jamal Deen, Martin Sandén, 2001 .

Lateral base design rules for optimized low-frequency noise of differentially grown SiGe heterojunction bipolar transistors

Jan V. Grahn, Mikael Östling, Martin Sandén, 2001, Microelectron. Reliab..

A Model for Processor Load Calculation in the Ericsson Co Private Branch Exchange MD110

Martin Sandén, 1994 .

Random telegraph signal noise in SiGe heterojunction bipolar transistors

Mikael Östling, Gijs Bosman, Martin von Haartman, 2002 .

A low-complexity 62-GHz fT SiGe heterojunction bipolar transistor process using differential epitaxy and in situ phosphorus-doped poly-Si emitter at very low thermal budget

Mikael Östling, Bengt Gunnar Malm, J. Pejnefors, 2000 .

UP-CONVERSION OF 1/f NOISE TO PHASE NOISE IN VOLTAGE CONTROLLED OSCILLATORS

Ognian Marinov, Fredrik Jonsson, Mikael Östling, 2001 .