James R. Grandusky

发表

High-power pseudomorphic mid-ultraviolet light-emitting diodes with improved efficiency and lifetime

Muhammad Jamil, Leo J. Schowalter, Jianfeng Chen, 2014, Photonics West - Optoelectronic Materials and Devices.

270 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60 mW Continuous Wave Output Power

Michael Wraback, Gregory A. Garrett, Leo J. Schowalter, 2013 .

Mechanism of large area dislocation defect reduction in GaN layers on AlN∕Si (111) by substrate engineering

Vibhu Jindal, James R. Grandusky, Neeraj Tripathi, 2007 .

Development of strain reduced GaN on Si "111… by substrate engineering

Vibhu Jindal, James R. Grandusky, Muhammad Arif, 2005 .

Pseudomorphic growth of thick n-type AlxGa1−xN layers on low-defect-density bulk AlN substrates for UV LED applications

Leo J. Schowalter, James R. Grandusky, Mark C. Mendrick, 2009 .

Identification of important growth parameters for the development of high quality Alx>0.5Ga1−xN grown by metal organic chemical vapor deposition

Vibhu Jindal, James R. Grandusky, Neeraj Tripathi, 2007 .

Development of native, single crystal AlN substrates for device applications

Leo J. Schowalter, James R. Grandusky, S. B. Schujman, 2006 .

High Power Pseudomorphic Mid Ultraviolet Light Emitting Diodes with Improved Efficiency and Lifetime

Leo J. Schowalter, Craig G. Moe, James R. Grandusky, 2013 .

High Output Power from 260 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Improved Thermal Performance

Michael Wraback, Leo J. Schowalter, Craig G. Moe, 2011 .

Correlation between optical and electrical performance of mid‐ultraviolet light‐emitting diodes on AlN substrates

Michael Wraback, Gregory A. Garrett, Leo J. Schowalter, 2014 .