R. Grótzschel

发表

Angular dependence of post-implantation damage recovery under 1 MeV electron irradiation in GaAs

S. Warchoł, J. Krynicki, H. Rzewuski, 2002 .

Quantitative AMS depth profiling of the hydrogen isotopes collected in graphite divertor and wall tiles of the tokamak ASDEX-Upgrade

C. García-Rosales, R. Behrisch, G. Sun, 1997 .

In Search Of Graphane -- A two-dimensional hydrocarbon

N. R. Ray, R. Grótzschel, A.K.Srivastava, 2008, 0802.3998.

Metal-insulator transition in amorphous Si 1 − x Ni x : Evidence for Mott’s minimum metallic conductivity

A. Mobius, M. Schreiber, M. Witcomb, 1998, cond-mat/9812106.

Mesotaxy by nickel diffusion into a buried amorphous silicon layer

S. Oktyabrsky, W. Sinke, S. Roorda, 1992 .

A Novel Process to Form Epitaxial Si Structures With Buried Silicide

W. Sinke, S. Roorda, R. Grótzschel, 1991 .

Hydrogen Depth Resolution in Multilayer Metal Structures, Comparison of Elastic Recoil Detection and Resonant Nuclear Reaction Method

U. Kreissig, E. Szilágyi, G. Harding, 2002 .

Post-implantation defects instability under 1 MeV electron irradiation in GaAs

S. Warchoł, J. Krynicki, H. Rzewuski, 2000 .