Michel Houssa

发表

Electrical Performance of Ge Devices

Eddy Simoen, Marc Heyns, Marc Meuris, 2007 .

(Invited) Optimization of WAl2O3Cu(-Te) Material Stack for High-Performance Conductive-Bridging Memory Cells

Wilfried Vandervorst, Michel Houssa, Karl Opsomer, 2013 .

2D Materials for Nanoelectronics

Alessandro Molle, Michel Houssa, Athanasios Dimoulas, 2016 .

Modeling challenges in nanoelectronics: an atomistic point of view

Stefan De Gendt, Marc Heyns, Wim Magnus, 2012 .

Ge: an enabling material for future high-performance CMOS technologies

Marc Heyns, Guy Brammertz, Matty Caymax, 2006 .

Key Issues for the Development of a Ge CMOS Device in an Advanced IC Circuit

Paul Zimmerman, Eddy Simoen, Cedric Huyghebaert, 2006 .

ANNUAL REPORT FOR 2003-2004

D. Landheer, Laxmidhar Behera, Durga Misra, 2004 .

Positive Bias Temperature Instability in nMOSFETs with ultra-thin Hf-silicate gate dielectrics

Guido Groeseneken, Calogero Pace, Marc Aoulaiche, 2005 .

Electrical characteristics of Ge/GeO x (N)/HfO 2 gate stacks

Marc Heyns, Andre Stesmans, Marc Meuris, 2005 .

Charge trapping in very thin high-permittivity gate dielectric layers

Marc Heyns, Andre Stesmans, Michel Houssa, 2000 .

Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions

Guido Groeseneken, Luigi Pantisano, Tom Schram, 2006 .

Vibrational properties of epitaxial silicene layers on (111) Ag

Daniele Chiappe, Eugenio Cinquanta, Carlo Grazianetti, 2014 .

Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2

Geoffrey Pourtois, Michel Houssa, G. Pourtois, 2011, Nano Research.

Two‐Dimensional Si Nanosheets with Local Hexagonal Structure on a MoS2 Surface

Daniele Chiappe, Eugenio Cinquanta, Carlo Grazianetti, 2014, Advanced materials.

Electrical properties of atomic-beam deposited GeO1- xNx/HfO2 gate stacks on Ge

Marc Meuris, Florence Bellenger, Matty Caymax, 2006 .

Electrical characterization of advanced gate dielectrics

Eddy Simoen, Guido Groeseneken, Ben Kaczer, 2007 .

Effect of hafnium germanate on the interface of HfO2/germanium metal oxide semiconductor devices

Stefan De Gendt, Marc Heyns, Marc Meuris, 2006 .

Origin and repartition of the oxide fixed charges generated by electrical stress in memory tunnel oxide

Pascal Masson, F. Lalande, Michel Houssa, 2004 .

Interface control of high-k gate dielectrics on Ge

Geoffrey Pourtois, Florence Bellenger, Matty Caymax, 2008 .

Polarity effect on the temperature dependence of leakage current through HfO2/SiO2 gate dielectric stacks

Stefan De Gendt, Marc Heyns, Zhen Xu, 2002 .

Electronic properties of (100)Ge/Ge(Hf)O2 interfaces : A first-principles study

Marc Heyns, Marc Meuris, Geoffrey Pourtois, 2008 .

Effect of hafnium germanate formation on the interface of HfO2/germanium metal oxide semiconductor devices

Marc Heyns, Matty Caymax, S. De Gendt, 2006 .

Constant voltage stress induced degradation in HfO2/SiO2 gate dielectric stacks

Richard Carter, Stefan De Gendt, Marc Heyns, 2002 .

Relation between stress-induced leakage current and time-dependent dielectric breakdown in ultra-thin gate oxides

Marc Heyns, Michel Houssa, Paul Mertens, 1999 .

Analysis of high voltage TDDB measurements on Ta2O5/SiO2 stack

Guido Groeseneken, Ben Kaczer, Marc Heyns, 1999 .

Frequency characterization and modeling of interface traps in HfSixOy/HfO2 gate dielectric stack from a capacitance point-of-view

Pascal Masson, Michel Houssa, Xavier Garros, 2002 .

High-resolution electron spin resonance analysis of ion bombardment induced defects in advanced low-κ insulators (κ = 2.0-2.5)

Andre Stesmans, Michel Houssa, Valery V. Afanas'ev, 2013 .

Collapse of the low temperature insulating state in Cr-doped V$_{2}$O$_{3}$ thin films

Jean-Pierre Locquet, Michel Houssa, Mariela Menghini, 2015, 1509.05866.

Model for the current–voltage characteristics of ultrathin gate oxides after soft breakdown

Tanya Nigam, Marc Heyns, Michel Houssa, 1998 .

HfO2 high-κ gate dielectrics on Ge (100) by atomic oxygen beam deposition

Matty Caymax, A. Dimoulas, Michel Houssa, 2005 .

Origin of the performances degradation of two-dimensional-based metal-oxide-semiconductor field effect transistors in the sub-10 nm regime: A first-principles study

Iuliana Radu, Geoffrey Pourtois, Aryan Afzalian, 2016 .

Electrical and reliability characterization of metal-gate/HfO2/Ge FET's with Si passivation

Guido Groeseneken, Ben Kaczer, Robin Degraeve, 2007 .

Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

Geert Hellings, Jerome Mitard, Marc Heyns, 2008 .

High-? Gate Dielectrics

Michel Houssa, M. Houssa, 2004 .

Model for interface defect and positive charge generation in ultrathin SiO2/ZrO2 gate dielectric stacks

Andre Stesmans, Michel Houssa, A. Stesmans, 2002 .

Buckled two-dimensional Xene sheets.

Alessandro Molle, Deji Akinwande, Michel Houssa, 2017, Nature materials.

Observation of critical gate oxide thickness for substrate-defect related oxide failure

Marc Heyns, Michel Houssa, Jan Vanhellemont, 1999 .

(Invited) Internal Photoemission of Electrons from 2-Dimensional Semiconductors

Daniele Chiappe, Iuliana Radu, Cedric Huyghebaert, 2017 .

A Thermally Stable and High-Performance 90-nm ${\rm Al}_{2}{\rm O}_{3}\backslash{\rm Cu}$-Based 1T1R CBRAM Cell

Malgorzata Jurczak, Nancy Heylen, Andrea Fantini, 2013, IEEE Transactions on Electron Devices.

High k dielectric materials prepared by atomic layer CVD

Richard Carter, Guido Groeseneken, Wilfried Vandervorst, 2001 .

Comment on "Observation of vortex-lattice melting in YBa2Cu3O7-delta by Seebeck-effect measurements"

Marcel Ausloos, Michel Houssa, Hassan Bougrine, 1999 .

Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide

Marc Heyns, Marc Meuris, Florence Bellenger, 2007 .

Origin of the current discretization in deep reset states of an Al2O3/Cu-based conductive-bridging memory, and impact on state level and variability

Robin Degraeve, Malgorzata Jurczak, Andrea Fantini, 2014 .

Passivation of Ge ( 100 ) ∕ GeO2 ∕ high-κ Gate Stacks Using Thermal Oxide Treatments

Marc Heyns, K. De Meyer, Marc Meuris, 2008 .

Impact of Hf content on negative bias temperature instabilities in HfSiON-based gate stacks

Guido Groeseneken, Marc Aoulaiche, S. De Gendt, 2005 .

Soft breakdown in ultrathin gate oxides: Correlation with the percolation theory of nonlinear conductors

Tanya Nigam, Marc Heyns, Michel Houssa, 1998 .

A first-principles study of the structural and electronic properties of III-V/thermal oxide interfaces

Andre Stesmans, Marc Meuris, Geoffrey Pourtois, 2009 .

Can silicon behave like graphene? A first-principles study

Andre Stesmans, Geoffrey Pourtois, Michel Houssa, 2010 .

Polarity dependence of defect generation in ultrathin SiO2/ZrO2 gate dielectric stacks

Andre Stesmans, Michel Houssa, Valeri Afanas'ev, 2001 .

Contribution of fast and slow states to Negative Bias Temperature Instabilities in HfxSi(1-x )ON/TaN based pMOSFETs

Guido Groeseneken, Marc Heyns, Marc Aoulaiche, 2005 .

Effect of extreme surface roughness on the electrical characteristics of ultra-thin gate oxides

Tanya Nigam, Marc Heyns, Michel Houssa, 1999 .

Excellent Roff/Ron ratio and short programming time in Cu/Al2O3-based conductive-bridging RAM under low-current (10 μA) operation

Malgorzata Jurczak, Andrea Fantini, Michel Houssa, 2016 .

Model for defect generation at the (1 0 0)Si/SiO2 interface during electron injection in MOS structures

Andre Stesmans, Michel Houssa, A. Stesmans, 2003 .

Thin epitaxial si films as a passivation method for Ge(100) : Influence of deposition temperature on ge surface segregation and the high-k/Ge interface quality

Paul Zimmerman, Ben Kaczer, Wilfried Vandervorst, 2006 .