J. Priesol

发表

Enhanced Photoluminescence from InGaN/GaN Quantum Wells on A GaN/Si(111) Template with Extended Three-Dimensional GaN Growth on Low-Temperature AlN Interlayer

C. Bowen, F. Uherek, D. Allsopp, 2013 .

Identification of Electrically Stressed Regions in AlGaN/GaN-on-Si Schottky Barrier Diode Using EBIC Technique

S. Decoutere, A. Chvála, S. Stoffels, 2021, IEEE Transactions on Electron Devices.

Investigation of defects in GaN HFET structures by electroluminescence

D. Donoval, A. Šatka, J. Priesol, 2014, The Tenth International Conference on Advanced Semiconductor Devices and Microsystems.

Optical characterization of magnesium incorporation in p-GaN layers for core–shell nanorod light-emitting diodes

T. Batten, D. Allsopp, P. Shields, 2018 .

Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability

Enrico Sangiorgi, G. Meneghesso, M. Meneghini, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

SEM techniques for characterization of GaN nanostructures and devices

F. Uherek, A. Šatka, A. Vincze, 2010, The Eighth International Conference on Advanced Semiconductor Devices and Microsystems.

Analysis and Modeling of Vertical Current Conduction and Breakdown Mechanisms in Semi-Insulating GaN Grown on GaN: Role of Deep Levels

J. Kuzmík, R. Stoklas, S. Hasenöhrl, 2021, IEEE Transactions on Electron Devices.

Semi-insulating GaN for vertical structures: role of substrate selection and growth pressure

J. Kuzmík, R. Stoklas, F. Gucmann, 2020 .

Thermal stability of rhombohedral α- and monoclinic β-Ga2O3 grown on sapphire by liquid-injection MOCVD

F. Gucmann, M. Ťapajna, E. Dobročka, 2023, Materials Science in Semiconductor Processing.

Design and fabrication of enhanced lateral growth for dislocation reduction in GaN using nanodashes

Alexander Satka, J. Priesol, Philip A. Shields, 2017 .

Quantitative analysis of cathodoluminescence phenomena in InGaN/GaN QW by Monte Carlo method

F. Uherek, D. Donoval, D. Allsopp, 2013 .

Cathodoluminescence characterization of InGaN/GaN QW pyramidal structure by Monte Carlo method

A. Šatka, J. Priesol, 2012, The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems.

Raman Spectroscopy Used to Assess the Temperature and Mechanical Stress in Thin Films of Microelectronic Structures

A. Šatka, M. Kadlecíková, J. Breza, 2018 .

Cross-sectional SEM-EBIC analysis of semi-vertical GaN power diodes

M. Borga, K. Geens, B. Bakeroot, 2022, International Conference on Advanced Semiconductor Devices and Microsystems.

Device and Circuit Models of Monolithic InAlN/GaN NAND and NOR Logic Cells Comprising D- and E-Mode HEMTs

Alexander Satka, Juraj Marek, Daniel Donoval, 2019, J. Circuits Syst. Comput..

Neural Network for Circuit Models of Monolithic InAlN/GaN NAND and NOR Logic Gates

Alexander Satka, Juraj Marek, Ales Chvála, 2019, 2019 14th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS).

Characterization of Monolithic InAlN/GaN NAND Logic Cell Supported by Circuit and Device Simulations

Juraj Marek, Daniel Donoval, Michal Blaho, 2018, IEEE Transactions on Electron Devices.