K. Hoffmann

Ion beam exposure of resists

H. Ryssel, H. Bernt, G. Prinke, 1982 .

Models for implantation into multilayer targets

Heiner Ryssel, Jürgen Lorenz, H. Ryssel, 1986 .

Simulation of doping processes

H. Ryssel, A. Sachs, K. Haberger, 1980, IEEE Transactions on Electron Devices.

Range parameters of boron implanted into silicon

H. Ryssel, G. Prinke, K. Haberger, 1981 .

Description of arsenic and boron profiles implanted in SiO2, Si3N4 and Si using Pearson distributions with four moments

G. Prinke, H. Ryssel, J. Biersack, 1981 .