Byungmin Kam

发表

Si‐core/SiGe‐shell channel nanowire FET for sub‐10‐nm logic technology in the THz regime

Seongjae Cho, Jongwan Jung, Won-Jun Lee, 2019, ETRI Journal.

Process Steps for High Quality Si-Based Epitaxial Growth at Low Temperature via RPCVD

Seongjae Cho, Jongwan Jung, Won-Jun Lee, 2021, Materials.