G. Kozlowski

发表

Dielectric characteristics of amorphous and crystalline BaHfO3 high-k layers on TiN for memory capacitor applications

C. Wenger, J. Dabrowski, G. Lippert, 2008, 2008 9th International Conference on Ultimate Integration of Silicon.

Hf- and Zr-based alkaline earth perovskite dielectrics for memory applications

H. Müssig, G. Lippert, G. Łupina, 2009 .

Perovskite BaHfO3 Dielectric Layers for Dynamic Random Access Memory Storage Capacitor Applications

C. Wenger, H. Müssig, G. Lupina, 2009 .

Compliant Si nanostructures on SOI for Ge nanoheteroepitaxy—A case study for lattice mismatched semiconductor integration on Si(001)

B. Tillack, P. Zaumseil, T. Schroeder, 2012 .

Clear Experimental Proof of the Compliant Behavior of Free-Standing Si Nanostructures on SOI for Ge Nanoheteroepitaxy by GI-XRD

B. Tillack, Y. Yamamoto, P. Zaumseil, 2012, 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM).

Deposition of BaHfO3 Dielectric Layers for Microelectronic Applications by Pulsed Liquid Injection MOCVD

C. Wenger, T. Katkus, Raimondas Galvelis, 2009 .

Progress Toward Megawatt Class Superconducting Generators which Operate at Greater than 20 Kelvin

S. J. Young, C. H. Joshi, C. Oberly, 1994 .

High temperature x ray diffraction measurements on Ge/Si(001) heterostructures: A study on the residual tensile strain

Thomas Schroeder, Peter Zaumseil, Giovanni Capellini, 2012 .

Acoustic microscopy and nonlinear effects in pressurized superfluid helium

M. Muha, A. Moulthrop, B. Hadimioglu, 1992, IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control.

Crystalline co-adsorption layers of indium and antimony on tungsten field emitter tips

A. Ciszewski, S. Surma, G. Kozlowski, 1982 .

Initial ion equatorial pitch angle distributions from medium and high energy neutral atom images obtained by IMAGE

D. Mitchell, C. Pollock, X. X. Zhang, 2001 .

Low threading dislocation Ge on Si by combining deposition and etching

Yuji Yamamoto, Bernd Tillack, Peter Zaumseil, 2012 .

Semipolar (11 2― 2) InGaN light‐emitting diodes grown on chemically–mechanically polished GaN templates

Frank Brunner, Pleun Maaskant, Duc V. Dinh, 2015 .

The role of SiGe buffer in growth and relaxation of Ge on free-standing Si(001) nano-pillars

B. Tillack, Y. Yamamoto, P. Zaumseil, 2012, Nanotechnology.

Growth and relaxation processes in Ge nanocrystals on free-standing Si(001) nanopillars

B. Tillack, Y. Yamamoto, P. Zaumseil, 2012, Nanotechnology.

The Influence of Defects and Impurities on Electrical Properties of High-k Dielectrics

Y. Nara, S. Inumiya, G. Kozłowski, 2008 .

Acoustic microscopy at 15.3 GHz in pressurized superfluid helium

A. A. Moulthrop, M. S. Muha, B. Hadimioglu, 1990 .

Selective Ge heteroepitaxy on free-standing Si (001) nanopatterns: A combined Raman, transmission electron microscopy, and finite element method study

B. Tillack, T. Schroeder, M. Schubert, 2011 .

Color stability, wave function overlap and leakage currents in InGaN-based LED structures: the role of the substrate orientation

Brian Corbett, B. Corbett, S. Schulz, 2015 .

Theoretical Determination of Domain Width of Simple‐Honeycomb Domain Structures

W. Ziȩtek, G. Kozlowski, 1965 .

Dielectric and structural properties of thin SrHfO3 layers on TiN

H. Müssig, G. Lippert, G. Lupina, 2008 .

Thin BaHfO3 high-k dielectric layers on TiN for memory capacitor applications

C. Wenger, P. Zaumseil, C. Walczyk, 2008 .

Atomic-scale engineering of future high-k dynamic random access memory dielectrics: The example of partial Hf substitution by Ti in BaHfO3

E. Zschech, P. Zaumseil, T. Schroeder, 2011 .