P. Ding

A new PVD sputtering source for metal gate application

D. Liu, Mengqi Ye, Zheng Xu, 2006, 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.

Oxidation of Ta diffusion barrier layer for Cu metallization in thermal annealing

Fu-Rong Chen, Fusen E. Chen, Peijun Ding, 2001 .

Four-Dimensional Dielectric Property Imaging of Low-K Materials for Copper Metallization Using Electron Spectroscopic Imaging Series

Fusen E. Chen, S. Lo, F. Chen, 2001, Microscopy and Microanalysis.

The effect of oxygen in the annealing ambient on interfacial reactions of Cu/Ta/Si multilayers

Fusen E. Chen, K. Yin, Fu-Rong Chen, 2001 .

Barrier and seed layers for damascene copper metallization

Fusen E. Chen, Peijun Ding, Barry Chin, 1998 .

Four-dimensional dielectric property image obtained from electron spectroscopic imaging series.

S. Lo, J. Kai, F. Chen, 2001, Journal of electron microscopy.

Study of metal gate deposition by magnetron sputtering

K. Ahmed, S. Hung, Mengqi Ye, 2006 .

Cu barrier/seed technology development for sub-0.10 micron copper chips

Zheng Xu, Jianming Fu, Ling Chen, 2001, 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443).

A high-throughput silicon epitaxy system for photovoltaic application

Zheng Xu, Jianming Fu, G. Song, 2010, 2010 35th IEEE Photovoltaic Specialists Conference.

Properties of PVD AlN for LED Applications

Yujing Chen, Xuewei Wu, Hougong Wang, 2019, 2019 China Semiconductor Technology International Conference (CSTIC).

IMP Ta/Cu seed layer technology for high-aspect-ratio via fill by electroplating, and its application to multilevel single-damascene copper interconnects

Vikram Pavate, Peijun Ding, Barry Chin, 1998, Advanced Lithography.