O. Zsebök

发表

Morphology of InGaAs/GaAs quantum wires prepared by highly controlled deep-etching techniques

T. Andersson, B. Nilsson, J. Thordson, 2001 .

Surface Morphology and Structure of GaN x As 1−x

U. Södervall, T. Andersson, T. Andersson, 1997 .

Synthesis of Gallane‐Amine adducts as potential precursors for GaAs and (AlGa)as MOVPE processes and the crystal structure of the {gallane · 1,3‐bis(dimethylamino)propane} adduct H3Ga · N(CH3)2(CH2)3N(CH3)2

W. Massa, W. Stolz, H. Protzmann, 1992 .

Group III hydride precursors for the metalorganic vapour phase epitaxy (MOVPE) of (AlGa)As/GaAs heterostructures

W. Stolz, H. Protzmann, E. Göbel, 1991 .

Amino-arsine and -phosphine compounds for the MOVPE of III–V semiconductors

W. Richter, W. Stolz, H. Protzmann, 1993 .

GaAs film deposited on SrTiO3 substrate by molecular beam epitaxy

M. Willander, W. Lu, Yinxiang Chen, 2000 .

Characterisation of surface morphological defects in MBE-grown GaN0.1As0.9 layers on GaAs

L. Ilver, U. Södervall, T. Andersson, 2000 .

The effect of the first GaN monolayer on the nitridation damage of molecular beam epitaxy grown GaN on GaAs(001)

L. Ilver, T. Andersson, J. Thordson, 2001 .

Effects of small amounts of Al in GaN grown on sapphire (0001) by molecular beam epitaxy

T. Andersson, J. Thordson, O. Zsebök, 2001 .

Surface reconstruction and surface morphology of GaN grown by MBE on GaAs (001)

T. Andersson, J. Thordson, O. Zsebök, 1999 .

Surface Morphology of MBE-grown GaN on GaAs(001) as Function of the N/Ga-ratio

T. Andersson, J. Thordson, O. Zsebök, 1998 .

The Formation of Nitridation Damage during the Growth of GaN on GaAs(001)

T. Andersson, J. Thordson, O. Zsebök, 2001 .

Nanocrystals at MBE-grown GaN/GaAs(001) interfaces

L. Ilver, T. Andersson, J. Thordson, 2000 .

Effects of buffer layer and nitrogen purification on optical properties of MBE-grown GaN on sapphire(0001)

J. Yang, O. Zsebök, 2004 .

Influence of N/Ga-flux ratio on optical properties and surface morphology of GaN grown on sapphire(0001) by MBE

T. Andersson, J. Thordson, O. Zsebök, 2000 .

The Effect of Al in Plasma-Assisted MBE-Grown GaN

L. Ilver, U. Södervall, T. Andersson, 2000 .