Eduard A. Cartier

发表

Hot electron emission lithography

M. Poppeller, Eduard A. Cartier, Ruud M. Tromp, 1998, Advanced Lithography.

Theory and modeling of laser-induced free-electron heating in wide-gap solids

Douglas Arnold, Eduard A. Cartier, 1993, Laser Damage.

Monte Carlo calculations of laser-induced free-electron heating in SiO2

Massimo V. Fischetti, Douglas Arnold, Eduard A. Cartier, 1991, Laser Damage.

Local transport and trapping issues in Al2O3 gate oxide structures

Eduard A. Cartier, E. Cartier, R. Ludeke, 2000 .

Atomic beam deposition of lanthanum- and yttrium-based oxide thin films for gate dielectrics

Eduard A. Cartier, Supratik Guha, Matthew Copel, 2000 .

Oxygen defects and Fermi level location in metal-hafnium oxide-silicon structures

Eduard A. Cartier, Richard Haight, Matthew Copel, 2005 .

The evolution of optical and electrical properties of low-k dielectrics under bias stress

Tony F. Heinz, Eduard A. Cartier, James R. Lloyd, 2009 .

Quasi-damascene metal gate/high-k CMOS using oxygenation through gate electrodes

Martin M. Frank, Eduard A. Cartier, Takashi Ando, 2009 .

Passivation and depassivation of silicon dangling bonds at the Si/SiO2 interface by atomic hydrogen

James H. Stathis, Eduard A. Cartier, Douglas A. Buchanan, 1993 .

Molecular-beam-deposited yttrium-oxide dielectrics in aluminum-gated metal–oxide–semiconductor field-effect transistors: Effective electron mobility

Eduard A. Cartier, Supratik Guha, Nestor A. Bojarczuk, 2001 .

Mobility in high-κ dielectric based field effect transistors

L. Pantisano, M. Heyns, S. De Gendt, 2003 .

Charge trapping and dielectric reliability of SiO/sub 2/-Al/sub 2/O/sub 3/ gate stacks with TiN electrodes

Philippe Roussel, Guido Groeseneken, Luigi Pantisano, 2003 .

A Study of Relaxation Current in

Guido Groeseneken, Luigi Pantisano, Marc Heyns, 2004 .

Degradation and breakdown of silicon dioxide films on silicon

Eduard A. Cartier, D. Arnold, D. Arnold, 1992 .

Hot-electron dynamics in SiO 2 and the degradation of the Si/SiO 2 -interface

Eduard A. Cartier, D. J. DiMaria, 1993 .

Atomic hydrogen-induced degradation of thin SiO2 gate oxides

James H. Stathis, Eduard A. Cartier, Douglas A. Buchanan, 1995 .

On the relationship between stress induced leakage currents and catastrophic breakdown in ultra-thin SiO2 based dielectrics

James H. Stathis, Eduard A. Cartier, Douglas A. Buchanan, 1997 .

Interaction of La2O3 capping layers with HfO2 gate dielectrics

Eduard A. Cartier, Supratik Guha, Vijay Narayanan, 2009 .

Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films

Eduard A. Cartier, Alessandro C. Callegari, E. Cartier, 2001 .

Photocurrent spectroscopy of low-k dielectric materials: Barrier heights and trap densities

Tony F. Heinz, Eduard A. Cartier, E. Cartier, 2008 .

Strong correlation between dielectric reliability and charge trapping in SiO2/Al2O3 gate stacks with TiN electrodes

Philippe Roussel, Guido Groeseneken, Luigi Pantisano, 2002 .

Correlation between charge Injection and trapping in SiO2/HfO2 gate stacks

Guido Groeseneken, Luigi Pantisano, Eduard A. Cartier, 2003 .

High performance and reliable strained SiGe PMOS FinFETs enabled by advanced gate stack engineering

Eduard A. Cartier, Takashi Ando, Vijay Narayanan, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

Erratum: Switching of ferroelectric polarization in epitaxial BaTiO 3 films on silicon without a conducting bottom electrode (Nature Nanotechnology (2013) 8 (748-754))

David J. Frank, Catherine Dubourdieu, Alexander A. Demkov, 2013 .

Anode hole injection and trapping in silicon dioxide

Eduard A. Cartier, Douglas A. Buchanan, E. Cartier, 1996 .

Impact of metal gates on remote phonon scattering in titanium nitride/hafnium dioxide n-channel metal–oxide–semiconductor field effect transistors–low temperature electron mobility study

Veena Misra, Martin M. Frank, Eduard A. Cartier, 2007 .

Conductance measurements on Pb centers at the (111) Si:SiO2 interface

James H. Stathis, Eduard A. Cartier, Michael J. Uren, 1996 .

Issues, achievements and challenges towards integration of high-k dielectrics

Richard Carter, Guido Groeseneken, L. Pantisano, 2002 .

Anomalous positive charge formation by atomic hydrogen exposure

Eduard A. Cartier, Douglas A. Buchanan, R. E. Stahlbush, 1995 .

Interface studies of tungsten gate metal–oxide–silicon capacitors

Paul M. Solomon, Wen-Chin Lee, Eduard A. Cartier, 2001 .

Materials characterization of ZrO2–SiO2 and HfO2–SiO2 binary oxides deposited by chemical solution deposition

Eduard A. Cartier, Deborah A. Neumayer, E. Cartier, 2001 .

Correlation between theory and data for mechanisms leading to dielectric breakdown

W. W. Abadeer, R.-P. Vollertsen, Eduard A. Cartier, 1994, Proceedings of 1994 VLSI Technology Symposium.

Atomic hydrogen‐induced interface degradation of reoxidized‐nitrided silicon dioxide on silicon

Eduard A. Cartier, Douglas A. Buchanan, G. J. Dunn, 1994 .

On the location and magnitude of trapped charge in poly- Si ALD-Al2O3 capped Hf-silicate gate stacks

Barry P. Linder, Martin M. Frank, Eduard A. Cartier, 2005 .

High-resolution depth profiling in ultrathin Al2O3 films on Si

Eduard A. Cartier, Evgeni P. Gusev, Israel Jacob Rabin Baumvol, 2000 .

Oxygen passivation of vacancy defects in metal-nitride gated HfO2/SiO2/Si devices

Eduard A. Cartier, Marinus Hopstaken, M. Copel, 2009 .

High-resolution depth profiling in ultrathin Al/sub 2/O/sub 3/ films on Si

Eduard A. Cartier, Evgeni P. Gusev, Israel Jacob Rabin Baumvol, 2000 .

Impact ionization and positive charge formation in silicon dioxide films on silicon

Eduard A. Cartier, D. Arnold, D. Arnold, 1992 .