Lawrence S. Melvin

发表

Calibration of a MOx-specific EUV photoresist lithography model

Craig D. Needham, Amrit Narasimhan, Ulrich Welling, 2020, Advanced Lithography.

Three dimensional mask effects in OPC process model development from first principles simulation

Lawrence S. Melvin, Thomas Schmoeller, Christian K. Kalus, 2008, European Mask and Lithography Conference.

A discussion of the regression of physical parameters for photolithographic process models

Lawrence S. Melvin, Kevin Lucas, 2007, SPIE Advanced Lithography.

Abbe-PCA-SMO: microlithography source and mask optimization based on Abbe-PCA

Lawrence S. Melvin, Charlie Chung-Ping Chen, Jason Hsih-Chie Chang, 2010, Advanced Lithography.

Hierarchical kernel generation for SMO application

Lawrence S. Melvin, Charlie Chung-Ping Chen, Jason Hsih-Chie Chang, 2011, Advanced Lithography.

Identification of subresolution assist features that are susceptible to imaging through process

Jensheng Huang, Lawrence S. Melvin, Martin Drapeau, 2006, SPIE Photomask Technology.

Investigating the threshold electron energy for reactions in EUV resist materials

Ulrich Welling, Lawrence S. Melvin, Robert L. Brainard, 2018, Advanced Lithography.

Abbe-PCA-SMO: microlithography source and mask optimization based on Abbe-PCA

Lawrence S. Melvin, Charlie Chung-Ping Chen, Shi-Jei Chang, 2009, Lithography Asia.

Compact modeling for the negative tone development processes

Lawrence S. Melvin, Jason Huang, Fred Kuo, 2017, Advanced Lithography.

Stochastic printing behavior of ML-defects on EUV mask

Lawrence S. Melvin, Renzo Capelli, Rik Jonckheere, 2019, Photomask Technology.

Model based pattern matching

Lawrence S. Melvin, Mathias Boman, Josh Tuttle, 2008, Lithography Asia.

Process model quality assessment by sensitivity analysis

Qiliang Yan, James P. Shiely, Lawrence S. Melvin, 2005, Photomask Japan.

Binary modeling method to check the sub-resolution assist features (SRAFs) printability

Qiliang Yan, Peter De Bisschop, Lawrence S. Melvin, 2012, Advanced Lithography.

Resist development modeling for OPC accuracy improvement

Lawrence S. Melvin, Kevin Lucas, Brian Ward, 2009, Advanced Lithography.

Correlation of experimentally measured atomic scale properties of EUV photoresist to modeling performance: an exploration

Qiliang Yan, Lawrence S. Melvin, Gregory Denbeaux, 2017, Advanced Lithography.

A 45° dual dipole decomposition scheme to improve image fidelity

Lawrence S. Melvin, Jianliang Li, Benjamin D. Painter, 2007 .

Lithographic manufacturing robustness analysis for as drawn patterns

Qiliang Yan, Lawrence S. Melvin, William F. Kielhorn, 2006 .

Stochastic printing behavior of non-local mask deficiencies in EUV lithography

Lawrence S. Melvin, Rik Jonckheere, 2020 .

Double patterning at NA 0.33 versus high-NA single exposure in EUV lithography: an imaging comparison

Vincent Wiaux, Lawrence S. Melvin, Vicky Philipsen, 2018, Advanced Lithography.

Improvement of model kernel in process simulation by taking pattern correlation into account

Qiliang Yan, Lawrence S. Melvin, Jianliang Li, 2007, European Mask and Lithography Conference.

Improving model-based optical proximity correction accuracy using improved process data generation

Lawrence S. Melvin, Mark Lu, Dion King, 2006, International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT).

Assist feature placement analysis using focus sensitivity models

Lawrence S. Melvin, Levi D. Barnes, Benjamin D. Painter, 2006, European Mask and Lithography Conference.

Impact of EUV mask absorber sidewall angle on patterning robustness

Lawrence S. Melvin, Tim Fühner, Yudhishthir Kandel, 2018, Advanced Lithography.

Two-dimensional feature stochastic printing with mask deficiencies in high-NA EUV

Lawrence S. Melvin, Eric Hendrickx, Rik Jonckheere, 2021 .

Contribution of mask roughness in stochasticity of high-NA EUV imaging

Lawrence S. Melvin, Rik Jonckheere, 2021, Photomask Technology.

Contribution of mask defectivity in stochastics of EUVL-based wafer printing

Lawrence S. Melvin, Rik Jonckheere, 2021 .

Transferring optical proximity correction effects into a process model

Qiliang Yan, Lawrence S. Melvin, Jianliang Li, 2008 .

Modelling strategies for the incorporation and correction of optical effects in EUVL

Qiliang Yan, Lawrence S. Melvin, Thomas Schmoeller, 2009 .

Exploration of etch step interactions in the dual patterning process for process modeling

Vincent Wiaux, Lawrence S. Melvin, Mireille Maenhoudt, 2008 .

Kernel Count Reduction in Model Based Optical Proximity Correction Process Models

Lawrence S. Melvin, Robert Lugg, Xiaohai Li, 2009 .

Reducing the pattern redundancy in optical proximity correction modeling by analyzing the pattern linearity

Qiliang Yan, Lawrence S. Melvin, Jianliang Li, 2010 .

Use of optical defocus components to investigate and improve pattern spatial frequency characteristics for more robust layouts

Qiliang Yan, James P. Shiely, Lawrence S. Melvin, 2005 .