Fu-Kuo Hsueh

发表

Low-cost and TSV-free monolithic 3D-IC with heterogeneous integration of logic, memory and sensor analogy circuitry for Internet of Things

Meng-Fan Chang, Guo-Wei Huang, Ting-Jen Hsueh, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Impact of Noise and Device Variation in Nanoscale Ferroelectric Finfets Towards Its Applicability in Neuromorphic Computing and Artificial Intelligence

Yao-Jen Lee, Fu-Kuo Hsueh, Sourav De, 2020 .

A Monolithic-3D SRAM Design with Enhanced Robustness and In-Memory Computation Support

Narayanan Vijaykrishnan, Meng-Fan Chang, Swaroop Ghosh, 2018, ISLPED.

First fully functionalized monolithic 3D+ IoT chip with 0.5 V light-electricity power management, 6.8 GHz wireless-communication VCO, and 4-layer vertical ReRAM

Guo-Wei Huang, Chih-Chao Yang, Po-Hung Chen, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

A Dual-Split-Controlled 4P2N 6T SRAM in Monolithic 3D-ICs With Enhanced Read Speed and Cell Stability for IoT Applications

Meng-Fan Chang, Guo-Wei Huang, Hiroyuki Yamauchi, 2018, IEEE Electron Device Letters.

CiM3D: Comparator-in-Memory Designs Using Monolithic 3-D Technology for Accelerating Data-Intensive Applications

Jia-Min Shieh, Jack Sampson, Cheng-Xin Xue, 2021, IEEE Journal on Exploratory Solid-State Computational Devices and Circuits.

Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft

Jia-Min Shieh, Chenming Hu, Wen-Cheng Chiu, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

Ultra-Low Power 3D NC-FinFET-based Monolithic 3D+ -IC with Computing-in-Memory for Intelligent IoT Devices

Guo-Wei Huang, Jia-Min Shieh, Chih-Chao Yang, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

TSV-free FinFET-based Monolithic 3D+-IC with computing-in-memory SRAM cell for intelligent IoT devices

Guo-Wei Huang, Jia-Min Shieh, Chih-Chao Yang, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

Diamond-shaped Ge and Ge0.9Si0.1 gate-all-around nanowire FETs with four {111} facets by dry etch technology

Guo-Wei Huang, Tuo-Hung Hou, Tien-Sheng Chao, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Footprint-efficient and power-saving monolithic IoT 3D+ IC constructed by BEOL-compatible sub-10nm high aspect ratio (AR>7) single-grained Si FinFETs with record high Ion of 0.38 mA/μm and steep-swing of 65 mV/dec. and Ion/Ioff ratio of 8

Jia-Min Shieh, Chih-Chao Yang, Chang-Hong Shen, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

Suspended Diamond-Shaped Nanowire With Four {111} Facets for High-Performance Ge Gate-All-Around FETs

Tuo-Hung Hou, Seiji Samukawa, Fu-Kuo Hsueh, 2016, IEEE Transactions on Electron Devices.

16nm functional 0.039µm2 6T-SRAM cell with nano injection lithography, nanowire channel, and full TiN gate

Shyi-Long Shy, Chenming Hu, Chien-Chao Huang, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

A 10 nm Si-based bulk FinFETs 6T SRAM with multiple fin heights technology for 25% better static noise margin

Chenming Hu, ChiaHua Ho, Yi-Ping Hsieh, 2013, 2013 Symposium on VLSI Technology.