J. C. Vildeuil

发表

Random telegraph signal: A sensitive and nondestructive tool for gate oxide single trap characterization

F. Martinez, Alain Hoffmann, Cédric Leyris, 2007, Microelectron. Reliab..

N-MOSFET oxide trap characterization induced by nitridation process using RTS noise analysis

F. Martinez, Alain Hoffmann, Cédric Leyris, 2007, Microelectron. Reliab..

Low frequency noise characterization in 0.13 mum p-MOSFETs. Impact of scaled-down 0.25, 0.18 and 0.13 mum technologies on 1/f noise

P. Llinares, J. C. Vildeuil, M. Marin, 2004, Microelectron. Reliab..

CMOS 1/f noise modelling and extraction of BSIM3 parameters using a new extraction procedure

M. Valenza, J. C. Vildeuil, D. Rigaud, 1999, ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307).

Impact of strained-channel n-MOSFETs with a SiGe virtual substrate on dielectric interface quality evaluated by low frequency noise measurements

Frédéric Boeuf, K. Rochereau, F. Martinez, 2007, Microelectron. Reliab..

Dc and low frequency noise analysis of hot-carrier induced degradation of low complexity 0.13 mum CMOS bipolar transistors

C. Delseny, B. Martinet, J. C. Vildeuil, 2005, Microelectron. Reliab..

A measurement based model of HEMT teking into account the non linear, non uniform transmission line nature of the channel its associated low frequency noise sources

M. Prigent, M. Camiade, J. C. Nallatamby, 2000 .

Low frequency noise in gate and drain of PHEMT’s and related correlation

M. Valenza, J. C. Vildeuil, D. Rigaud, 2000 .

1/f noise measurements in n-channel MOSFETs processed in 0.25 μm technology: Extraction of BSIM3v3 noise parameters

P. Llinares, M. Valenza, J. C. Vildeuil, 2002 .

Evolution of R.T.S Source Activities in Saturation Range in N‐MOSFETs for Different Oxidation Temperatures

F. Roy, Alain Hoffmann, M. Valenza, 2005 .

Extraction of the BSIM3 1/f noise parameters in CMOS transistors

M. Valenza, J. C. Vildeuil, D. Rigaud, 1999 .

Oxide traps characterization of 45 nm MOS transistors by gate current R.T.S. noise measurements

Frederic Boeuf, Thomas Skotnicki, B. Tavel, 2005 .

Can 1/f noise in MOSFETs be reduced by gate oxide and channel optimization?

B. Tavel, P. Stolk, Franck Arnaud, 2005 .