Donghyeok Kim

Influences of ALD Al2O3 on the surface band-bending of c-plane, Ga-face GaN

Jie Zhou, B. Ooi, Z. Ma, 2021, Japanese Journal of Applied Physics.

Influences of ALD Al$_2$O$_3$ on the surface band-bending of c-plane, Ga-face GaN and the implication to GaN-collector npn heterojunction bipolar transistors

B. Ooi, Z. Ma, Jie Zhou, 2021, 2109.04597.

Synthesis of N-aryl amines enabled by photocatalytic dehydrogenation

H. Ihee, Jungkweon Choi, Siin Kim, 2020, Chemical science.

Galvanic corrosion inhibition from aspect of bonding orbital theory in Cu/Ru barrier CMP

U. Paik, Taeseup Song, Seho Sun, 2021, Scientific reports.

Low contact-resistivity and high-uniformity Ni/Au ohmic contacts on Si nanomembranes grafted to Si substrates via low-temperature rapid thermal annealing

Sang June Cho, Jie Zhou, Z. Ma, 2022, Materials Science in Semiconductor Processing.

Monocrystalline Si/\b{eta}-Ga2O3 p-n heterojunction diodes fabricated via grafting

Jie Zhou, G. Jessen, A. Osinsky, 2023, 2305.19138.

Interfacial band parameters of ultrathin ALD–Al2O3, ALD–HfO2, and PEALD–AlN/ALD–Al2O3 on c-plane, Ga-face GaN through XPS measurements

Jie Zhou, Z. Ma, T. Ng, 2022, Journal of Applied Physics.

Characteristics of grafted monocrystalline Si/ β -Ga2O3p–n heterojunction

K. Chabak, Shuoyang Qiu, Hokyung Jang, 2024, Applied Physics Letters.