S. Boulay

CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon

S. Decoutere, M. Van Hove, D. Wellekens, 2012, IEEE Electron Device Letters.

AlGaN/GaN HEMTs on a (001)-Oriented Silicon Substrate Based on 100-nm SiN Recessed Gate Technology for Microwave Power Amplification

J. Massies, S. Joblot, Y. Cordier, 2007, IEEE Transactions on Electron Devices.

AlGaN/GaN HEMTs on (001) oriented silicon substrate based on 100nm SiN recessed gate technology for low cost device fabrication

J. Massies, Y. Cordier, F. Semond, 2007, 2007 European Microwave Integrated Circuit Conference.

CMOS Process Leakage AlGaN / GaN MISHEMT on Silicon

M. V. Hove, D. Wellekens, S. Stoffels, 2012 .

A reproducible process for mesoscopic superconducting indium contacts to GaAs/AlGaAs heterostructures

D. Mailly, P. Roche, A. Cavanna, 2009 .

AlGaN/GaN HEMTs on epitaxies grown on composite substrate

C. Brylinski, H. Gerard, J.C. De Jaeger, 2007, 2007 European Microwave Integrated Circuit Conference.

Au-free , High-Breakdown AlGaN / GaN MISHEMTs with Low Leakage , High Yield and Robust TDDB Characteristics

S. Decoutere, M. V. Hove, D. Wellekens, 2011 .

Modelling and simulation of low-frequency broadband LNA using InGaAs/InAlAs structures: A new approach

S. Arshad, S. Boulay, A. Bouloukou, 2008 .