Shun-Wei Tang

发表

Demonstration of Schottky barrier diode integrated in 200 V power p-GaN HEMTs technology with robust stability

S. Decoutere, B. de Jaeger, D. Wellekens, 2022, Microelectronics Reliability.

Robust Forward Gate Bias TDDB Stability in Enhancement-mode Fully Recessed Gate GaN MIS-FETs with ALD Al2O3Gate Dielectric

Sayeem Bin Kutub, Tian-Li Wu, Shun-Wei Tang, 2020, 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).

Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic

Tian-Li Wu, Shun-Wei Tang, Hong-Jia Jiang, 2020, Micromachines.

Analysis of the subthreshold characteristics in AlGaN/GaN HEMTs with a p-GaN gate

Tian-Li Wu, Szu-Chia Chen, Shun-Wei Tang, 2021, Microelectronics Reliability.

Investigation of the passivation-induced VTH shift in p-GaN HEMTs with Au-free gate-first process

K. Kao, Tian-Li Wu, Cheng-Hung Wu, 2021, Microelectronics Reliability.

Silicon Nitride-induced Threshold Voltage Shift in p-GaN HEMTs with Au-free Gate-first Process

K. Kao, Tian-Li Wu, Shun-Wei Tang, 2020, 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).

Comprehensive Investigation of the Switching Stability in SiC and GaN Power Devices

Tian-Li Wu, Shun-Wei Tang, Chao-Ta Fan, 2022, 2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).

A Novel Physics-Based Approach to Analyze and Model E-Mode p-GaN Power HEMTs

M. Meneghini, C. de Santi, Tian-Li Wu, 2021, IEEE Transactions on Electron Devices.

Determination of Suitable Indicators of AlGaN/GaN HEMT Wafer Quality Based on Wafer Test and Device Characteristics

Y. Hsin, Shun-Wei Tang, Yi-nan Zhong, 2018 .

Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs

S. Decoutere, D. Wellekens, Tian-Li Wu, 2023, IEEE Transactions on Electron Devices.

Stability of wireless power transfer using gamma-ray irradiated GaN power HEMTs

H. Hsu, Tian-Li Wu, D. Chao, 2021, Microelectronics Reliability.

Investigation of the degradations in power GaN-on-Si MIS-HEMTs subjected to cumulative γ-ray irradiation

M. Meneghini, G. Meneghesso, E. Zanoni, 2019, Microelectronics Reliability.

Ultra-Fast Positive Gate Bias Stress (<100ns) to Understand the Hole Injection in Power p-GaN HEMTs

S. Decoutere, D. Wellekens, Tian-Li Wu, 2023, 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

High Threshold Voltage Enhancement-Mode Regrown p-GaN Gate HEMTs With a Robust Forward Time-Dependent Gate Breakdown Stability

S. Decoutere, B. de Jaeger, D. Wellekens, 2022, IEEE Electron Device Letters.