Bin Cheng

The influence of lightly doped p-GaN cap layer on p-GaN/AlGaN/GaN HEMT

Yi Hao, Chong Wang, Xuefeng Zheng, 2022, Semiconductor Science and Technology.

China experts' consensus on preventive and interceptive orthodontic treatments of malocclusions of children.

Wei-Bing Zhang, Xiao-bing Li, Chen-chen Zhou, 2021, Hua xi kou qiang yi xue za zhi = Huaxi kouqiang yixue zazhi = West China journal of stomatology.

Research on the mechanism and influence of P incorporation in N-rich nitride AlPN and growth of high quality AlPN/GaN HEMT

Jincheng Zhang, Shenglei Zhao, Yue Hao, 2023, Vacuum.