Ying Jiang

发表

Field isolation for GaN MOSFETs on AlGaN/GaN heterostructure with boron ion implantation

Y. Ohno, J. Ao, Dejun Wang, 2014 .

Metal-oxide-semiconductor AlGaN/GaN heterostructure field-effect transistors using TiN/AlO stack gate layer deposited by reactive sputtering

J. Ao, Liuan Li, Yonggang Xu, 2014 .

Synthesis of titanium nitride for self-aligned gate AlGaN/GaN heterostructure field-effect transistors

J. Ao, Liuan Li, Qingpeng Wang, 2014, Nanoscale Research Letters.

Evaluation of a Gate-First Process for AlGaN/GaN Heterostructure Field-Effect Transistors

Y. Ohno, J. Ao, Liuan Li, 2013 .

Process dependency on threshold voltage of GaN MOSFET on AlGaN/GaN heterostructure

Y. Ohno, J. Ao, Dejun Wang, 2014 .

GaN metal-oxide-semiconductor field-effect transistors on AlGaN/GaN heterostructure with recessed gate

J. Ao, Liuan Li, Pangpang Wang, 2015, Frontiers of Materials Science.

Effects of recess process and surface treatment on the threshold voltage of GaN MOSFETs fabricated on a AlGaN/GaN heterostructure

J. Ao, Dejun Wang, Liuan Li, 2015 .

Self-aligned-gate AlGaN/GaN heterostructure field-effect transistor with titanium nitride gate

L. Wang, J. Ao, Liuan Li, 2016 .

A self-aligned gate GaN MOSFET using an ICP-assisted low-temperature Ohmic process

J. Ao, Dejun Wang, Liuan Li, 2015 .

Reduction of leakage current by O2 plasma treatment for device isolation of AlGaN/GaN heterojunction field-effect transistors

J. Ao, Dejun Wang, Liuan Li, 2015 .

Improvement of device isolation using field implantation for GaN MOSFETs

J. Ao, Dejun Wang, Liuan Li, 2016 .

Gate-first GaN MOSFET based on dry-etching-assisted non-annealing ohmic process

J. Ao, Dejun Wang, Liuan Li, 2015 .

Electrical properties of TiN on gallium nitride grown using different deposition conditions and annealing

J. Ao, Liuan Li, Qingpeng Wang, 2014 .

A bulk-driven CMOS voltage-to-current transconductor and its applications

Yingtao Jiang, Ying Jiang, 1997 .