Jun-Seok Jeong

Ka-Band MMIC Using AlGaN/GaN-on-Si With Recessed High- ${k}$ Dual MIS Structure

K. Seo, H. Cha, Hongjong Park, 2018, IEEE Electron Device Letters.

Thermal stability and small-signal characteristics of AlGaN/GaN HEMTs with gate insertion metal layer for millimeter-wave applications

K. Seo, H. Cha, Jae-Gil Lee, 2017 .

Electrical degradation on DC and RF characteristics of short channel AlGaN/GaN-on-Si hemt with highly doped carbon buffer

K. Seo, H. Cha, Jae-Gil Lee, 2017 .

V-band monolithic microwave integrated circuit with continuous wave output power of >23.5 dBm using conventional AlGaN/GaN-on-Si structure

K. Seo, H. Cha, S. Eom, 2016 .