A. Pavlov

发表

Nonalloyed ohmic contacts for high-electron-mobility transistors based on AlGaN/GaN heterostructures

Y. Fedorov, D. N. Slapovskiy, V. Pavlov, 2017 .

AlGaN/GaN-HEMTs with a breakdown voltage higher than 100 V and maximum oscillation frequency fmax as high as 100 GHz

D. L. Gnatyuk, E. N. Ovcharenko, V. Ustinov, 2009 .

Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures

A. Zhukov, Z. Alferov, R. Khabibullin, 2016 .

The thermal stability of nonalloyed ohmic contacts to AlGaN/GaN heterostructures

D. N. Slapovskiy, V. Pavlov, A. Pavlov, 2017 .

Low-Energy Defectless Dry Etching of the AlGaN/AlN/GaN HEMT Barrier Layer

Y. Fedorov, A. Pavlov, K. N. Tomosh, 2018 .

The influence of gate length on the electron injection of velocity in an AlGaN/AlN/GaN НЕМТ channel

R. Khabibullin, D. Ponomarev, R. Galiev, 2017 .

On a two-layer Si3N4/SiO2 dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs

Y. Fedorov, A. Pavlov, S. Arutyunyan, 2016 .

Designing gallium nitride-based monolithic microwave integrated circuits for the Ka, V, and W bands

D. L. Gnatyuk, O. S. Matveenko, Y. Fedorov, 2016 .

Electrical and thermal properties of photoconductive antennas based on InxGa1 – xAs (x > 0.3) with a metamorphic buffer layer for the generation of terahertz radiation

A. E. Yachmenev, I. A. Glinskiy, D. S. Ponomarev, 2017 .

Investigation of the fabrication processes of AlGaN/AlN/GaN НЕМТs with in situ Si3N4 passivation

R. Khabibullin, P. Maltsev, V. Pavlov, 2016, Semiconductors.

Narrowband microwave microelectromechanical switch on gallium arsenide substrates for operation in a frequency band of 10–12 GHz

A. Pavlov, P. P. Mal’tsev, N. Shchavruk, 2016 .

Field-Effect Transistors with High Electron Mobility on an AlGaN/GaN Heterostructure with Gate Recessing into the Barrier Layer

D. N. Slapovskiy, V. Pavlov, A. Pavlov, 2022, Nanobiotechnology Reports.

Alloyed Si/Al-based ohmic contacts to AlGaN/GaN nitride heterostructures

D. N. Slapovskiy, V. Pavlov, A. Pavlov, 2017 .

Nonalloyed ohmic contacts for high-electron-mobility transistors based on AlGaN/GaN heterostructures

Y. Fedorov, D. N. Slapovskiy, V. Pavlov, 2017, Russian Microelectronics.