Jiaqi Zhang

发表

Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature

J. Ao, Liuan Li, Yang Liu, 2016 .

Effects of recess process and surface treatment on the threshold voltage of GaN MOSFETs fabricated on a AlGaN/GaN heterostructure

J. Ao, Dejun Wang, Liuan Li, 2015 .

Self-aligned-gate AlGaN/GaN heterostructure field-effect transistor with titanium nitride gate

L. Wang, J. Ao, Liuan Li, 2016 .

A self-aligned gate GaN MOSFET using an ICP-assisted low-temperature Ohmic process

J. Ao, Dejun Wang, Liuan Li, 2015 .

Dependence of device behaviours on oxygen vacancies in ZnSnO thin-film transistors

Z. Ye, Jianguo Lu, Xifeng Li, 2019, Applied Physics A.

Gate-first GaN MOSFET based on dry-etching-assisted non-annealing ohmic process

J. Ao, Dejun Wang, Liuan Li, 2015 .

Memristors based on amorphous ZnSnO films

F. Zhuge, Z. Ye, Jianguo Lu, 2019, Materials Letters.

Plasma-assisted surface treatment for low-temperature annealed ohmic contact on AlGaN/GaN heterostructure field-effect transistors

Y. Maeda, J. Ao, Liuan Li, 2017 .