T. Shiraishi

Evaluation of a Gate-First Process for AlGaN/GaN Heterostructure Field-Effect Transistors

Y. Ohno, J. Ao, Liuan Li, 2013 .

Lateral control of impurity-induced disordering of AlAs/GaAs superlattice

Y. Bando, S. Yokoyama, M. Kawabe, 1989 .

The origin of a highly resistive layer at a growth-interrupted interface of GaAs grown by molecular-beam epitaxy

M. Kawabe, H. Takasugi, Y. Iimura, 1987 .

Initial stage of epitaxy of GaAs on Si

M. Kawabe, T. Shiraishi, 1989 .

Electrical properties of TiN on gallium nitride grown using different deposition conditions and annealing

J. Ao, Liuan Li, Qingpeng Wang, 2014 .