M. Bryan

Low Specific On-Resistance AlGaN/AlN/GaN High Electron Mobility Transistors on High Resistivity Silicon Substrate

C. H. Lee, G. Ng, Zhihong Liu, 2010 .

Effect of antimony doping on the thermoelectric properties of the transition metal pentatellurides (Hf/sub 1-X/Zr/sub x/Te/sub 5-Y/Sb/sub Y/)

T. Tritt, J. Kolis, D. Ketchum, 1999, Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407).

Inversion of the Internal Electric Field due to Inhomogeneous Incorporation of Ge Dopants in GaN/AlN Heterostructures Studied by Off-Axis Electron Holography.

E. Monroy, D. Cooper, Lou Denaix, 2023, ACS applied materials & interfaces.

Measuring electrical properties in semiconductor devices by pixelated STEM and off-axis electron holography (or convergent beams vs. plane waves).

V. Boureau, M. Bryan, L. Bruas, 2024, Micron.