J. Son

发表

650 V Dispersion-free enhancement-mode GaN-on-Si HEMTs processed in a 200 mm CMOS Fab

S. Decoutere, W. Luo, D. Marcon, 2017, 2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).