X. He

发表

Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD

Z. Liu, J. P. Liu, H. Yang, 2016 .

Differential resistance of GaN-based laser diodes with and without polarization effect.

Z. Liu, J. Zhu, D. Jiang, 2015, Applied optics.

Comparative study of argon and hydrogen/helium plasma treatments on the properties of Cu/SiLK damascene structures for interconnect technology

Zhe Chen, D. Zhang, Chen Li, 2004 .

Synthesis and properties of silicon dioxide films prepared by pulsed laser deposition using ceramic SiO2 target

Xiaomin Li, Xiangdong Gao, L. H. Wu, 2009 .

Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition

Z. Liu, Xiaoyue He, D. Jiang, 2014 .

Effect of V-defects on the performance deterioration of InGaN/GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness

Z. Liu, Hongyang Wang, H. Yang, 2013 .

Investigation on the performance and efficiency droop behaviors of InGaN/GaN multiple quantum well green LEDs with various GaN cap layer thicknesses

Z. Liu, J. P. Liu, H. Yang, 2016 .

Synthesis and optical properties of tantalum oxide films prepared by ionized plasma-assisted pulsed laser deposition

Xiaomin Li, Xiangdong Gao, X. He, 2008 .

p‐doped GaAs/Ga0.51In0.49P quantum well intersub‐band photodetectors

M. Razeghi, G. Brown, X. He, 1995 .

Characterization of high quality GaInP/GaAs superlattices grown on GaAs and Si substrates by gas source molecular beam epitaxy

M. Razeghi, S. Shastry, S. Slivken, 1994 .

Investigation of the heteroepitaxial interfaces in the GaInP/GaAs superlattices by high‐resolution x‐ray diffractions and dynamical simulations

Manijeh Razeghi, M. Razeghi, X. He, 1993 .

Temperature dependence of threshold current density Jth and differential efficiency ηd of high‐power InGaAsP/GaAs (λ=0.8 μm) lasers

M. Razeghi, I. Eliashevich, M. Erdtmann, 1995 .

Optical investigations of GaAs‐GaInP quantum wells grown on the GaAs, InP, and Si substrates

M. Razeghi, X. He, 1992 .

Exploration of entire range of III–V semiconductors and their device applications

M. Razeghi, Y. H. Choi, X. He, 1995 .

High‐power InGaAsP/GaAs 0.8‐μm laser diodes and peculiarities of operational characteristics

M. Razeghi, D. Garbuzov, I. Eliashevich, 1994 .

Theoretical investigation of minority carrier leakages of high-power 0.8 μm InGaAsP/InGaP/GaAs laser diodes

Manijeh Razeghi, M. Erdtmann, I. Eliashevich, 1994 .

Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold.

Z. Liu, J. Zhang, J. Zhu, 2017, Applied optics.

The effectiveness of electron blocking layer in InGaN‐based laser diodes with different indium content

Z. Liu, J. P. Liu, D. Jiang, 2016 .

Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes.

Z. Liu, J. P. Liu, H. Yang, 2016, Optics express.

Effect of Polyacenic Semiconductors on the Performance of Olivine LiFePO4

A. Jalbout, H. Y. Yu, X. He, 2008 .

Well resolved room‐temperature photovoltage spectra of GaAs‐GaInP quantum wells and superlattices

M. Razeghi, X. He, 1993 .

Correlation between x‐ray diffraction patterns and strain distribution inside GaInP/GaAs superlattices

M. Razeghi, S. Kim, M. Erdtmann, 1994 .

Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films

Pengwan Chen, Z. S. Liu, Z. Liu, 2014 .