Chenyang Huang

A Novel Step–Doped Channel AlGaN/GaN HEMTs with Improved Breakdown Performance

Xiaoming Huang, Yufeng Guo, Jiafei Yao, 2021, Micromachines.

Analytical model for the potential and electric field distributions of AlGaN/GaN HEMTs with gate-connected FP based on Equivalent Potential Method

Xiaoming Huang, Yufeng Guo, Jiafei Yao, 2020 .

Modeling of the Variation of Lateral Doping (VLD) Lateral Power Devices via 1-D Analysis Using Effective Concentration Profile Concept

Yufeng Guo, Jun Zhang, Kemeng Yang, 2019, IEEE Journal of the Electron Devices Society.

Analytical Study on the Breakdown Characteristics of Si-Substrated AlGaN/GaN HEMTs With Field Plates

Yufeng Guo, Jiafei Yao, Jun Zhang, 2020, IEEE Journal of the Electron Devices Society.

Electrical Stability Modeling Based on Surface Potential for a-InGaZnO TFTs under Positive-Bias Stress and Light Illumination

Xiaoming Huang, W. Cao, Zheng Shi, 2023, Micromachines.