Shaveta

Comparative Study of InAlN and InGaN Back Barrier Layer on p-Gate/AlGaN/GaN HEMT

R. Chaujar, Shaveta, H. M. M. Ahmed, 2021, Lecture Notes in Electrical Engineering.

Rapid detection of biomolecules in a dielectric modulated GaN MOSHEMT

R. Chaujar, Shaveta, H. M. M. Ahmed, 2020, Journal of Materials Science: Materials in Electronics.

Comparison of residual stress in deep boron diffused silicon (100), (110) and (111) wafers

R. Chatterjee, S. Dutta, Kajal Jindal, 2013 .

Diffusion induced residual stress in comb-type microaccelerometer structure

R. K. Bhan, S. Dutta, R. Pal, 2014, Journal of Materials Science: Materials in Electronics.

Effect of Residual Stress on Cantilever Type Push–Pull Capacitive Accelerometer Structure

K. K. Jain, S. Dutta, Nidhi Gupta, 2017, Springer Proceedings in Physics.