M. Rudinsky

发表

Analysis of strain and dislocation evolution during MOCVD growth of an AlGaN/GaN power high-electron-mobility transistor structure

E. V. Yakovlev, E. Yakovlev, R. Talalaev, 2019, Japanese Journal of Applied Physics.

Surface electrostatic potential of inn epitaxial layers and its changes during anodic oxidization

P. Brunkov, A. Gutkin, M. Rudinsky, 2012, Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques.

Electron states at electrolyte/n-GaN and electrolyte/n-InGaN interfaces

P. Brunkov, A. Gutkin, M. Rudinsky, 2012 .

Surface states on the n-InN-electrolyte interface

S. Gwo, V. Davydov, P. Brunkov, 2008 .

Radiative and Auger Recombination Constants and Internal Quantum Efficiency of (0001) AlGaN Deep‐UV Light‐Emitting Diode Structures

S. Karpov, M. Rudinsky, 2019, physica status solidi (a).

Impact of metalorganic vapor phase epitaxy growth conditions on compressive strain relaxation in polar III-nitride heterostructures

S. Karpov, R. Talalaev, A. Lobanova, 2019, Japanese Journal of Applied Physics.

Local triboelectrification of an n-GaAs surface using the tip of an atomic-force microscope

R. V. Sokolov, N. Gordeev, S. Mintairov, 2013 .

Electron states at electrolyte/n-GaN and electrolyte/n-InGaN interfaces

P. Brunkov, A. Gutkin, M. Rudinsky, 2012, Semiconductors.

Mechanism of stress relaxation in (0001) InGaN/GaN via formation of V-shaped dislocation half-loops

Alexey E. Romanov, S. Karpov, A. Romanov, 2013 .

Stress‐dislocation management in MOVPE of GaN on SiC wafers

E. V. Yakovlev, A. V. Sakharov, A. F. Tsatsulnikov, 2016 .

Electrochemical capacitance-voltage profiling of the free-carrier concentration in HEMT heterostructures based on InGaAs/AlGaAs/GaAs compounds

A. Egorov, P. Brunkov, B. Ber, 2011 .