Rainer Minixhofer

发表

Negative bias temperature instability modeling for high-voltage oxides at different stress temperatures

Tibor Grasser, Oliver Triebl, Robert Entner, 2007, Microelectron. Reliab..

Process variation aware ESD design window considerations on a 0.18μm analog, mixed-signal high voltage technology

Rainer Minixhofer, Wolfgang Reinprecht, Frederic Roger, 2011, EOS/ESD Symposium Proceedings.

Optimizing a sub-wavelength grating lens for large incidence angles

Rainer Minixhofer, Lukas Elsinger, Peter Hadley, 2015, SPIE NanoScience + Engineering.

Towards probabilistic analog behavioral modeling

Joachim Haase, André Lange, Rainer Minixhofer, 2015, 2015 IEEE International Symposium on Circuits and Systems (ISCAS).

Analysis of hot carrier effects in a 0.35 µm high voltage n-channel LDMOS transistor

Hubert Enichlmair, Rainer Minixhofer, Jong Mun Park, 2007, Microelectron. Reliab..

Interface traps density-of-states as a vital component for hot-carrier degradation modeling

Tibor Grasser, Oliver Triebl, Hajdin Ceric, 2010, Microelectronics and reliability.

A novel simulation methodology for development of ESD primitives on a 0.18µm analog, mixed-signal high voltage process technology

Rainer Minixhofer, Frederic Roger, Juri Cambieri, 2011, 2011 International Conference on Simulation of Semiconductor Processes and Devices.

Drift design impact on quasi-saturation & HCI for scalable N-LDMOS

Martin Knaipp, Yun Shi, Rainer Minixhofer, 2011, 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.

Integrating Technology Simulation into Semiconductor Manufacturing: Bridging the Gap between TCAD and Semiconductor Manufacturing

Rainer Minixhofer, 2008 .

FlexRay Transceiver in a 0.35µm CMOS High-Voltage Technology

Roberto Roncella, Roberto Saletti, Federico Baronti, 2006, Proceedings of the Design Automation & Test in Europe Conference.

Investigation of the influence of unwanted micro lenses caused by semiconductor processing excursions on optical behavior of CMOS photodiodes

Jong Mun Park, Rainer Minixhofer, Andrea Kraxner, 2015, Photonics West - Optoelectronic Materials and Devices.

Investigations on CMOS photodiodes using scanning electron microscopy with electron beam induced current measurements

Rainer Minixhofer, P. Hadley, Frederic Roger, 2014, Other Conferences.

Hot-carrier reliability in high-voltage lateral double-diffused MOS transistors

Martin Knaipp, Hubert Enichlmair, Rainer Minixhofer, 2008, IET Circuits Devices Syst..

Building interchangeable black-box models of integrated circuits for EMC simulations

Adrijan Baric, Rainer Minixhofer, Marko Magerl, 2015, 2015 10th International Workshop on the Electromagnetic Compatibility of Integrated Circuits (EMC Compo).

Extraction of material parameters based on inverse modeling of three-dimensional interconnect fusing structures

Stefan Holzer, Siegfried Selberherr, Tibor Grasser, 2004, Microelectron. J..

Scalable High Voltage CMOS technology for Smart Power and sensor applications

Martin Knaipp, Gregor Schatzberger, Hubert Enichlmair, 2008, Elektrotech. Informationstechnik.

Investigation of NBTI Recovery During Measurement

Tibor Grasser, Hubert Enichlmair, Rainer Minixhofer, 2006 .

Interface states charges as a vital component for hc degradation modeling.

E. Seebacher, Tibor Grasser, Christoph Jungemann, 2010 .

TCAD study of Single Photon Avalanche Diode on 0.35μm high voltage technology

Rainer Minixhofer, Ewald Wachmann, Frederic Roger, 2013, 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation

Karl Rupp, Tibor Grasser, Prateek Sharma, 2015, IEEE Transactions on Electron Devices.

Coupled simulation to determine the impact of across wafer variations in oxide PECVD on electrical and reliability parameters of through-silicon vias

Siegfried Selberherr, Peter Evanschitzky, Lado Filipovic, 2015 .