W.R. Hunter

Direct moat isolation for VLSI

K.L. Wang, S.A. Saller, W.R. Hunter, 1982, IEEE Transactions on Electron Devices.

Enhanced-performance 4K × 1 high-speed SRAM using optically defined submicrometer devices in selected circuits

W.R. Hunter, P.K. Chatterjee, A.H. Shah, 1982, IEEE Transactions on Electron Devices.

1 /spl mu/m MOSFET VLSI technology. V. A single-level polysilicon technology using electron-beam lithography

B.L. Crowder, A. Cramer, W.R. Hunter, 1979, IEEE Journal of Solid-State Circuits.

Composite TiSi2/n + poly-Si low-resistivity gate electrode and interconnect for VLSI device technology

K.L. Wang, A.F. Tasch, T.C. Holloway, 1982, IEEE Transactions on Electron Devices.