Jintong Wu

发表

Raman and photoluminescence properties of un-/ion-doped β-Ga2O3 single-crystals prepared by edge-defined film-fed growth method

F. Fang, J. Hao, Shengnan Zhang, 2021 .

Divacancy and silicon vacancy color centers in 4H-SiC fabricated by hydrogen and dual ions implantation and annealing

Ying Song, Pinghen Tan, Zongwei Xu, 2022, Ceramics International.

Single-Wedge Lift-Out for Atom Probe Tomography Al/Ni Multilayers Specimen Preparation Based on Dual-Beam-FIB

Yue Zhang, Zheng Zhang, Zongwei Xu, 2021, Micromachines.

MD simulation of two-temperature model in ion irradiation of 3C-SiC: Effects of electronic and nuclear stopping coupling, ion energy and crystal orientation

F. Fang, M. Rommel, K. Nordlund, 2021, Journal of Nuclear Materials.

Molecular dynamics simulation on the effect of dislocation structures on the retention and distribution of helium ions implanted into silicon

F. Fang, Ying Song, Zongwei Xu, 2020 .

MD simulation study on defect evolution and doping efficiency of p-type doping of 3C-SiC by Al ion implantation with subsequent annealing

A. Hartmaier, M. Rommel, K. Nordlund, 2021 .

Numerical study of silicon vacancy color centers in silicon carbide by helium ion implantation and subsequent annealing

F. Fang, Ying Song, Zongwei Xu, 2021, Nanotechnology.

Molecular dynamics simulation of color centers in silicon carbide by helium and dual ion implantation and subsequent annealing

F. Fang, M. Rommel, Ying Song, 2021 .