Maya Lakhdara

Mathematical approach and optimisation of nanometric base thickness for a SiGeC HBT dedicated to radiofrequency applications

Saïda Latreche, Christian Gontrand, Maya Lakhdara, 2014, J. Comput. Appl. Math..

First- and second-order electrical modelling and experiment on very high speed SiGeC heterojunction bipolar transistors

Christian Gontrand, Saida Latreche, Jacques Verdier, 2009 .