Steven E. Laux

发表

Scaling MOSFETs to 10 nm: Coulomb effects, source starvation, and virtual source model

P. Asbeck, Mark J. W. Rodwell, Nobuyuki Sano, 2009 .

Techniques for small-signal analysis of semiconductor devices

Steven E. Laux, S. Laux, 1985, IEEE Transactions on Electron Devices.

IBM Research Report Quantum-Based Simulation Analysis of Scaling in Ultra-Thin Body Device Structures

Arvind Kumar, Steven E. Laux, Jakub Kedzierski, 2004 .

Monte Carlo simulation of hot-carrier transport in real semiconductor devices

Massimo V. Fischetti, Steven E. Laux, Woo-Hyeong Lee, 1989 .

Monte Carlo analysis of semiconductor devices: the DAMOCLES program

David J. Frank, Massimo V. Fischetti, Steven E. Laux, 1990 .

Animation and 3D Color Display of Multiple-Variable Data: Application to Semiconductor Design

Edward M. Buturla, Edward J. Farrell, Steven E. Laux, 1985, IBM J. Res. Dev..

On particle-mesh coupling in Monte Carlo semiconductor device simulation

Steven E. Laux, 1996, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

mcplotgl: graphics for the DAMOCLES program

Massimo V. Fischetti, Steven E. Laux, 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

A general control-volume formulation for modeling impact ionization in semiconductor transport

Steven E. Laux, Bertrand M. Grossman, 1985, IEEE Transactions on Electron Devices.

MONTE: A Program to Simulate the Heterojunction Devices in Two Dimensions

Steven E. Laux, Jeffrey Y.-F. Tang, S. Laux, 1986, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.

Numerical modeling of advanced semiconductor devices

Antonio Gnudi, Wai Lee, Giorgio Baccarani, 1992, IBM J. Res. Dev..

The use of simulation in semiconductor technology development

Jack A. Mandelman, T. D. Linton, Orest Bula, 1990 .

Revisiting the analytic theory of p-n junction impedance: improvements guided by computer simulation leading to a new equivalent circuit

Steven E. Laux, S. Laux, K. Hess, 1999 .

Channel sensitivity to gate roughness in a split‐gate GaAs‐AlGaAs heterostructure

Steven E. Laux, Frank Stern, Arvind Kumar, 1989 .

Monte Carlo simulations of p- and n-channel dual-gate Si MOSFET's at the limits of scaling

David J. Frank, Massimo V. Fischetti, Steven E. Laux, 1993 .

Electron states in narrow gate-induced channels in Si

Steven E. Laux, Frank Stern, S. Laux, 1986 .

(Invited) Scaling FETs to 10 nm: Coulomb Effects, Source Starvation, and Virtual Source

Yuan Taur, Mark J. W. Rodwell, Peter M. Asbeck, 2010 .

Quasi-one-dimensional electron states in a split-gate GaAs/AlGaAs heterostructure

David J. Frank, Steven E. Laux, Frank Stern, 1988 .

Semiconductor device simulation using generalized mobility models

Robert G. Byrnes, Steven E. Laux, S. Laux, 1985 .

Charge transfer and low‐temperature electron mobility in a strained Si layer in relaxed Si1−xGex

Steven E. Laux, Frank Stern, S. Laux, 1992 .

Ballistic FET modeling using QDAME: quantum device analysis by modal evaluation

Massimo V. Fischetti, Steven E. Laux, S. Laux, 2002 .