Saptarshi Mandal

AN SOI LDMOS FOR BETTER SWITCH APPLICATION INCREASING THE DRIFT REGION OF AN N-MOS: A COMPARATIVE STUDY

Paramita Dey, Arzoo Rafique, Sutapa Adhikari, 2012 .

Understanding the impact of slow electro-forming in Resistive Random Access Memories

Saptarshi Mandal, Branden Long, Rashmi Jha, 2013, 2013 IEEE 56th International Midwest Symposium on Circuits and Systems (MWSCAS).

Comparative study of CAVET with dielectric and p-GaN gate and Mg ion-implanted current blocking layer

Saptarshi Mandal, Srabanti Chowdhury, Stacia Keller, 2017, Optical Engineering + Applications.

A study of the effect of surface pretreatment on atomic layer deposited Al2O3 interface with GaN

Saptarshi Mandal, Wenwen Li, Srabanti Chowdhury, 2017, Optical Engineering + Applications.

Study of mn doped hfo2 based synaptic devices for neuromorphic applications

Saptarshi Mandal, S. Mandal, 2013 .

Effects of Mg-Doping on ${\rm HfO}_{2}$ -Based ReRAM Device Switching Characteristics

Saptarshi Mandal, Rashmi Jha, R. Jha, 2013, IEEE Electron Device Letters.

Switching dynamics and charge transport studies of resistive random access memory devices

Saptarshi Mandal, Kevin D. Leedy, Branden Long, 2012 .

Study of Synaptic Behavior in Doped Transition Metal Oxide-Based Reconfigurable Devices

Saptarshi Mandal, Branden Long, Rashmi Jha, 2013, IEEE Transactions on Electron Devices.

Dispersion Free 450-V p GaN-Gated CAVETs With Mg-ion Implanted Blocking Layer

Saptarshi Mandal, Dong Ji, Srabanti Chowdhury, 2017, IEEE Electron Device Letters.