L. Amichi

Electrical and optical properties of heavily Ge-doped AlGaN

E. Monroy, C. Bougerol, E. Robin, 2018, Journal of Physics D: Applied Physics.

Mapping of the electrostatic potentials in MOCVD and hybrid GaN tunnel junctions for InGaN/GaN blue emitting light emitting diodes by off-axis electron holography correlated with structural, chemical, and optoelectronic characterization

B. Damilano, N. Rochat, G. Feuillet, 2021, Journal of Applied Physics.

Composition Analysis of III-Nitrides at the Nanometer Scale: Comparison of Energy Dispersive X-ray Spectroscopy and Atom Probe Tomography

E. Monroy, P. Jouneau, C. Bougerol, 2016, Nanoscale Research Letters.

Correlative investigation of Mg doping in GaN layers grown at different temperatures by atom probe tomography and off-axis electron holography

P. Jouneau, C. Bougerol, P. Vennégués, 2019, Nanotechnology.

Three-dimensional measurement of Mg dopant distribution and electrical activity in GaN by correlative atom probe tomography and off-axis electron holography

P. Jouneau, C. Bougerol, A. Dussaigne, 2020, Journal of Applied Physics.

Ge doping of GaN beyond the Mott transition

M. Eickhoff, E. Monroy, C. Bougerol, 2016, 1604.00231.

Dopant radial inhomogeneity in Mg-doped GaN nanowires

P. Jouneau, C. Bougerol, E. Robin, 2018, Nanotechnology.