D. Donetsky

发表

Unrelaxed bulk InAsSb with novel absorption, carrier transport, and recombination properties for MWIR and LWIR photodetectors

Leon Shterengas, Gela Kipshidze, Gregory Belenky, 2012, Defense + Commercial Sensing.

Effects of carrier concentration and phonon energy on carrier lifetime in type-2 SLS and properties of InAs1-XSbX alloys

Leon Shterengas, Gela Kipshidze, Gregory Belenky, 2011, Defense + Commercial Sensing.

Infrared emitters and photodetectors with InAsSb bulk active regions

Leon Shterengas, Gela Kipshidze, Gregory Belenky, 2013, Defense, Security, and Sensing.

1.5 and 2.3 μm diode laser arrays for optical pumping

Ramon U. Martinelli, Leon Shterengas, A. Gourevitch, 2005, SPIE Optics + Photonics.

Carrier lifetime measurements in InAs/GaSb strained layer superlattice structures

Gregory Belenky, D. Wang, D. Donetsky, 2010, Defense + Commercial Sensing.

Recent developments in high power 2.3-2.4 &mgr;m diode lasers

Leon Shterengas, Gregory Belenky, David Westerfeld, 2007, SPIE Defense + Commercial Sensing.

Temperature dependencies of output characteristics of 1.3-μm InGaAsP/InP lasers with different profiles of p-doping

Serge Luryi, Gleb Shtengel, Rudolf F. Kazarinov, 1998, Photonics West.

Room temperature operated 3.1-μm type-I GaSb-based diode lasers with 80mW continuous wave output power

Leon Shterengas, Gela Kipshidze, Gregory Belenky, 2008 .

Current spread and overheating of high power laser bars

A. Gourevitch, B. Laikhtman, Gregory Belenky, 2004 .

Development of Bulk InAsSb Alloys and Barrier Heterostructures for Long-Wave Infrared Detectors

Leon Shterengas, Gela Kipshidze, Gregory Belenky, 2015, Journal of Electronic Materials.

LASERS, OPTICS, AND OPTOELECTRONICS 2737 Actively mode-locked erbium fiber ring laser using a Fabry-Perot semiconductor modulator as mode locker and tunable filter

Hideo Hosono, Larry A. Coldren, Shenping Li, 1999 .

Band gap of InAs 1 − x Sb x with native lattice constant

Leon Shterengas, Gela Kipshidze, Gregory Belenky, 2012 .

Role of p-doping profile and regrowth on the static characteristics of 1.3-/spl mu/m MQW InGaAsP-InP lasers: experiment and modeling

C. L. Reynolds, Mark S. Hybertsen, Gregory Belenky, 1999 .

Room temperature operated 3.1-μm type-I GaSb-based diode lasers with 80mW continuous wave output power

D. Donetsky, T. Hosoda, L. Shterengas, 2008, 2008 Conference on Lasers and Electro-Optics and 2008 Conference on Quantum Electronics and Laser Science.

High-Power 2 . 3-m GaSb-Based Linear Laser Array

A. Gourevitch, D. Westerfeld, D. Donetsky, 2004 .

Interband absorption strength in long-wave infrared type-II superlattices with small and large superlattice periods compared to bulk materials

Leon Shterengas, Gela Kipshidze, Igor Vurgaftman, 2016 .

2.7-$\mu$ m GaSb-Based Diode Lasers With Quinary Waveguide

D. Donetsky, T. Hosoda, L. Shterengas, 2009, IEEE Photonics Technology Letters.

An injectionless FIR laser based on interband transitions of hot holes in germanium

S. N. Danilov, D. Donetsky, Leonid E. Vorobjev, 1994 .

Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures

Gregory Belenky, D. Donetsky, Stefan P. Svensson, 2009 .

Minority carrier lifetime in type-2 InAs–GaSb strained-layer superlattices and bulk HgCdTe materials

Gregory Belenky, D. Donetsky, Stefan P. Svensson, 2010 .

2.3 /spl mu/m type-I quantum well GaInAsSb/AlGaAsSb/GaSb laser diodes with quasi-CW output power of 1.4W

Leon Shterengas, Gela Kipshidze, Gregory Belenky, 2007 .

Monolithic Series‐Interconnected GaInAsSb/AlGaAsSb Thermophotovoltaic Devices Wafer Bonded to GaAs

Serge Luryi, Gregory Belenky, Michael K. Connors, 2004 .

Measurement of the Auger recombination rate in p-type 0.54 eV GaInAsSb by time-resolved photoluminescence

Serge Luryi, Gregory Belenky, D. Donetsky, 2003 .

High power 2.4μm heavily strained type-I quantum well GaSb-based diode lasers with more than 1W of continuous wave output power and a maximum power-conversion efficiency of 17.5%

Leon Shterengas, Gregory Belenky, D. Donetsky, 2007 .

Structural and luminescent properties of bulk InAsSb

Leon Shterengas, Gela Kipshidze, Gregory Belenky, 2012 .

Measurement of the Auger Recombination Rate in p-type 0.54-eV GaInAsSb by Time-Resolved Photoluminescence

Serge Luryi, Gregory Belenky, D. Donetsky, 2003 .

Extremely small bandgaps, engineered by controlled multi-scale ordering in InAsSb

Leon Shterengas, Gela Kipshidze, Gregory Belenky, 2016 .

Analysis of temperature dependence of the threshold current in 2.3–2.6 μm InGaAsSb/AlGaAsSb quantum-well lasers

D. Donetsky, Aleksey D. Andreev, A. Andreev, 1999 .

Metamorphic InAsSb-based Barrier Photodetectors for the Long Wave Infrared Region

Leon Shterengas, Gela Kipshidze, Gregory Belenky, 2013 .