Y. Yogo

Influence of naphthacene doping on the electrical and light-emitting behavior of 8-hydroxyquinoline aluminum based electroluminescent devices

T. Wada, M. Takeuchi, I. Kikuma, 1993 .

Threshold reduction of 1.3 μm GaInAsP/InP surface emitting laser by a maskless circular planar buried heterostructure regrowth

F. Koyama, K. Iga, T. Baba, 1993 .

Near room temperature continuous wave lasing characteristics of GaInAsP/InP surface emitting laser

Kenichi Iga, Fumio Koyama, Toshihiko Baba, 1993 .

Low Threshold Room Temperature Pulsed and -31 °C CW Operations of 1.3 µm GaInAsP/InP Buried Heterostructure Surface Emitting Lasers

Kenichi Iga, Fumio Koyama, Toshihiko Baba, 1993 .

Continuous Wave GaInAsP/InP Surface Emitting Lasers with a Thermally Conductive MgO/Si Mirror

F. Koyama, K. Iga, T. Baba, 1994 .