Tamotsu Hashizume

发表

Performance verification of a novel soft switching three-phase utility frequency AC to high frequency AC direct power converter with PFC function for industrial IH applications

Toshihiko Tanaka, Tetsu Kachi, Masayuki Okamoto, 2010, Proceedings of 14th International Power Electronics and Motion Control Conference EPE-PEMC 2010.

Interactions between drifting carrier plasma waves and electromagnetic waves in the interdigital - gated n - AIGaAs / GaAs HEMT devices

Seiya Kasai, Hideki Hasegawa, Abdul Manaf Hashim, 2009 .

Novel structure of GaAs-based interdigital-gated HEMT plasma devices for solid-state THz wave amplifier

Seiya Kasai, Hideki Hasegawa, Abdul Manaf Hashim, 2007, Microelectron. J..

総論;総論;Overview of Crystal for Power Devices

Hidekazu Yamamoto, Tamotsu Hashizume, Nobuo Satoh, 2017 .

Gate Leakage in AlGaN/GaN Heterostructure Field Effect Transistors and Its Suppression by Novel Al~2O~3 Insulated Gate

Hideki Hasegawa, Tamotsu Hashizume, Shinya Ootomo, 2003 .

Surface control of GaN alloys for photonic and electronic devices

Tamotsu Hashizume, Nanako Shiozaki, Kota Ohi, 2009, OPTO.

13.56-MHz Class-E RF power amplifier using normally-on GaN HEMT

Masayuki Okamoto, Toshihiko Tanaka, Tamotsu Hashizume, 2014, IECON 2014 - 40th Annual Conference of the IEEE Industrial Electronics Society.

Integration of interdigital-gated plasma wave device for proximity communication system application

Seiya Kasai, Hideki Hasegawa, Abdul Manaf Hashim, 2007, Microelectron. J..

Fabrication and Characterization of Active and Sequential Circuits Utilizing Schottky-Wrap-Gate-Controlled GaAs Hexagonal Nanowire Network Structures

Seiya Kasai, Hong-Quan Zhao, Tamotsu Hashizume, 2008, IEICE Trans. Electron..

Resonant gate driver for normally-on GaN high-electron-mobility transistor

Toshihiko Tanaka, Tetsu Kachi, Masayuki Okamoto, 2013, 2013 IEEE ECCE Asia Downunder.

Interface control technologies for high-power GaN transistors: Self-stopping etching of p-GaN layers utilizing electrochemical reactions

Masamichi Akazawa, Tamotsu Hashizume, Taketomo Sato, 2016, SPIE OPTO.

2-bit Arithmetic Logic Unit Utilizing Hexagonal BDD Architecture for Implementation of Nanoprocessor on GaAs Nanowire Network(Session4B: Emerging Devices II)

Seiya Kasai, Hong-Quan Zhao, Tamotsu Hashizume, 2008, SDM 2008.

Future of Heterostructure Microelectronics and Roles of Materials Research for Its Progress

Seiya Kasai, Hideki Hasegawa, Tamotsu Hashizume, 2006, IEICE Trans. Electron..

Multiple-Valued Logic Gates Using Asymmetric Single-Electron Transistors

Seiya Kasai, Wancheng Zhang, Tamotsu Hashizume, 2009, 2009 39th International Symposium on Multiple-Valued Logic.

HfSiOx-gate GaN MOS-HEMTs for RF power transistor

Toshihide Nabatame, Tamotsu Hashizume, Koji Shiozaki, 2021, OPTO.

Properties of Metal-Semiconductor Interfaces Formed on n-Type GaN

Hideki Hasegawa, Tamotsu Hashizume, Yuji Koyama, 1999 .

Effects of interface states and temperature on the C-V behavior of metal/ insulator/AlGaN/GaN heterostructure capacitors

Tamotsu Hashizume, T. Hashizume, Boguslawa Adamowicz, 2008 .

Dynamics and control of recombination process at semiconductor surfaces, interfaces and nano-structures

Seiya Kasai, Hideki Hasegawa, Tamotsu Hashizume, 2006 .

Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors

Hideki Hasegawa, Tamotsu Hashizume, Shinya Ootomo, 2003 .

Mechanism of surface conduction in the vicinity of Schottky gates on AlGaN∕GaN heterostructures

Seiya Kasai, Tamotsu Hashizume, Junji Kotani, 2007 .

Large modulation of conductance in Interdigital-Gated HEMT devices due to surface plasma wave interactions

Seiya Kasai, Hideki Hasegawa, Abdul Manaf Hashim, 2005 .

Leakage mechanism in GaN and AlGaN Schottky interfaces

Hideki Hasegawa, Tamotsu Hashizume, Junji Kotani, 2004 .

Analysis and control of excess leakage currents in nitride-based Schottky diodes based on thin surface barrier model

Hideki Hasegawa, Tamotsu Hashizume, Junji Kotani, 2004 .

Loss evaluation of an AC-AC direct converter with a new GaN HEMT SPICE model

Tetsu Kachi, Masayuki Okamoto, Eiji Hiraki, 2011, 2011 IEEE Energy Conversion Congress and Exposition.

Novel Wire Transistor Structure with In-Plane Gate Using Direct Schottky Contacts to 2DEG

Hideki Hasegawa, Hiroshi Okada, Tamotsu Hashizume, 1995 .

Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers

Hideki Hasegawa, Eiichi Sano, Toshiki Makimoto, 2004 .

Fabrication and characterization of a GaAs-based three-terminal nanowire junction device controlled by double Schottky wrap gates

Seiya Kasai, Yuta Shiratori, Tamotsu Hashizume, 2007 .

Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures

Hideki Hasegawa, Tamotsu Hashizume, Shinya Ootomo, 2001 .

Hydrogen response of Pd Schottky diodes formed on AlGaN/GaN heterostructure

Hideki Hasegawa, Takeshi Kimura, Tamotsu Hashizume, 2005 .

Plasma wave interactions in the microwave to THz range between carriers in a semiconductor 2DEG and interdigital slow waves

Hideki Hasegawa, Abdul Manaf Hashim, Tamotsu Hashizume, 2003 .

Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric

Hideki Hasegawa, Tamotsu Hashizume, Shinya Ootomo, 2003 .

Surface Control Process of AlGaN for Suppression of Gate Leakage Currents in AlGaN/GaN Heterostructure Field Effect Transistors

Tamotsu Hashizume, Masamitsu Kaneko, Junji Kotani, 2006 .

Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors

Hideki Hasegawa, Tamotsu Hashizume, Shinya Ootomo, 2003 .

Impact of GaN cap on charges in Al2O3/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations

Frank Brunner, Jan Kuzmik, Tamotsu Hashizume, 2014 .

X-Ray Photoelectron Spectroscopy and Ultrahigh Vacuum Contactless Capacitance-Voltage Characterization of Novel Oxide-Free InP Passivation Process Using a Silicon Surface Quantum Well

Hideki Hasegawa, Tamotsu Hashizume, Hiroshi Takahashi, 1999 .

Deep Level Characterization of Submillimeter-Wave GaAs Schottky Diodes Produced by a Novel In-Situ Electrochemical Process

Hans L. Hartnagel, Hideki Hasegawa, Tamotsu Hashizume, 1993 .

Chemical and Potential Bending Characteristics of SiNx/AlGaN Interfaces Prepared by In situ Metal-Organic Chemical Vapor Deposition

Satoshi Nakazawa, Tetsuzo Ueda, Tamotsu Hashizume, 2007 .

Minority carrier diffusion length in GaN: Dislocation density and doping concentration dependence

Naoki Kobayashi, Hideki Hasegawa, Takashi Fukui, 2018 .

Effects of Cl2-Based Inductively Coupled Plasma Etching of AlGaN on Interface Properties of Al2O3/AlGaN/GaN Heterostructures

Tamotsu Hashizume, T. Hashizume, Zenji Yatabe, 2012 .

Tunneling injection of electrons at nanometer-scale Schottky gate edge of AlGaN/GaN heterostructure transistors and its computer simulation

Seiya Kasai, Hideki Hasegawa, Tamotsu Hashizume, 2005 .

Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 by atomic layer deposition: leakage current and density of states reduction

Peter Kordos, Tamotsu Hashizume, M. Blaho, 2017 .

Insulated gate and surface passivation structures for GaN-based power transistors

Tamotsu Hashizume, T. Hashizume, Zenji Yatabe, 2016 .

Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs

Tamotsu Hashizume, Kota Ohi, T. Hashizume, 2013, IEEE Transactions on Electron Devices.

State of the art on gate insulation and surface passivation for GaN-based power HEMTs

Jan Kuzmik, Tamotsu Hashizume, Zenji Yatabe, 2017 .

Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates

Tamotsu Hashizume, T. Hashizume, Zenji Yatabe, 2016 .

Interfacial Reaction and Electrical Properties in the Sputter-Deposited Al/Ti Ohmic Contact to n-InP

Hideki Hasegawa, Tamotsu Hashizume, Mayumi B. Takeyama, 1999 .

Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors

Tamotsu Hashizume, T. Hashizume, Zenji Yatabe, 2013 .

Pt Schottky diode gas sensors formed on GaN and AlGaN/GaN heterostructure

Hideki Hasegawa, Tamotsu Hashizume, Noboru Negoro, 2005 .

Electron Beam Induced Current Characterization of Novel GaAs Quantum Nanostructures Based on Potential Modulation of Two-Dimensional Electron Gas by Schottky In-Plane Gates

Seiya Kasai, Tamotsu Hashizume, Hideaki Hasegawa, 1996 .

Near-midgap deep levels in Al0.26Ga0.74N grown by metal-organic chemical vapor deposition

Tamotsu Hashizume, Junji Kotani, T. Hashizume, 2009 .

Insulator-GaN interface structures formed by plasma-assisted chemical vapor deposition

Hideki Hasegawa, Tamotsu Hashizume, Ryuusuke Nakasaki, 2000 .

Properties of a GaAs Single Electron Path Switching Node Device Using a Single Quantum Dot for Hexagonal BDD Quantum Circuits

Seiya Kasai, Hideki Hasegawa, Tamotsu Hashizume, 2006 .

Experimental validation of newly fabricated normally-on GaN high-electron-mobility transistor

Tetsu Kachi, Masayuki Okamoto, Eiji Hiraki, 2013, 2013 IEEE Energy Conversion Congress and Exposition.

Minority carrier diffusion lengths in MOVPE-grown n- and p-InGaN and performance of AlGaN/InGaN/GaN double heterojunction bipolar transistors

Naoki Kobayashi, Hideki Hasegawa, Takashi Fukui, 2007 .

Sensing Mechanism of InP Hydrogen Sensors Using Pt Schottky Diodes Formed by Electrochemical Process

Hideki Hasegawa, Takeshi Kimura, Tamotsu Hashizume, 2005 .

Observation of Coulomb Blockade Type Conductance Oscillations up to 50 K in Gated InGaAs Ridge Quantum Wires Grown by Molecular Beam Epitaxy on InP Substrates

Hideki Hasegawa, Hiroshi Okada, Tamotsu Hashizume, 1997 .

High Thermoelectric Power Factor of High‐Mobility 2D Electron Gas

Atsushi Yamamoto, Tamotsu Hashizume, Sung Wng Kim, 2017, Advanced science.

A binary-decision-diagram-based two-bit arithmetic logic unit on a GaAs-based regular nanowire network with hexagonal topology.

Seiya Kasai, Hong-Quan Zhao, Yuta Shiratori, 2009, Nanotechnology.

Lateral tunneling injection and peripheral dynamic charging in nanometer-scale Schottky gates on AlGaN/GaN hetrosturucture transistors

Seiya Kasai, Hideki Hasegawa, Tamotsu Hashizume, 2005 .

Capacitance?Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN Interface

Tamotsu Hashizume, M. Miczek, Chihoko Mizue, 2011 .