C. Diouf

A new method for quickly evaluating reversible and permanent components of the BTI degradation

M. Rafik, Gilles Reimbold, X. Federspiel, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Gate stack solutions in gate-first FDSOI technology to meet high performance, low leakage, VT centering and reliability criteria

X. Garros, J. Mazurier, M. Rafik, 2016, 2016 IEEE Symposium on VLSI Technology.

Reliability compact modeling approach for layout dependent effects in advanced CMOS nodes

F. Andrieu, M. Rafik, X. Federspiel, 2017, 2017 IEEE International Reliability Physics Symposium (IRPS).

Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment

M. Rafik, P. Mora, X. Federspiel, 2015, 2015 IEEE International Reliability Physics Symposium.

AC TDDB extensive study for an enlargement of its impact and benefit on circuit lifetime assessment

M. Rafik, X. Federspiel, Xavier Garros, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Investigation of NBTI Dynamic Behavior with Ultra-Fast Measurement

X. Federspiel, F. Cacho, C. Diouf, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

New methodology for drain current local variability characterization using Y function method

G. Ghibaudo, N. Planes, J. Rosa, 2013, 2013 IEEE International Conference on Microelectronic Test Structures (ICMTS).

High field transport characterization in nano MOSFETs using 10GHz capacitance measurements

G. Ghibaudo, J. Rosa, D. Gloria, 2013, 2013 IEEE International Electron Devices Meeting.

“Y function” method applied to saturation regime: Apparent saturation mobility and saturation velocity extraction

Stephane Monfray, Jerome Mitard, Gerard Ghibaudo, 2013 .