D. Carisetti

Backside Defect Localizations and Revelations Techniques on Gallium Arsenide (GaAs) Devices

Romain Desplats, Philippe Perdu, Dean Lewis, 2002, Microelectron. Reliab..

Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements

Nathalie Labat, Nathalie Malbert, Arnaud Curutchet, 2013, Microelectron. Reliab..

Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques

Nathalie Labat, Nathalie Malbert, Benoit Lambert, 2008, Microelectron. Reliab..

Failure analysis of GaAs microwave devices with plastic encapsulation by electro-optical techniques

Hélène Frémont, Nathalie Labat, Nathalie Malbert, 2013, Microelectron. Reliab..

Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations

Nathalie Labat, Nathalie Malbert, Benoit Lambert, 2010, Microelectron. Reliab..

Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test

Nathalie Labat, Nathalie Malbert, Benoit Lambert, 2012, Microelectron. Reliab..

Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC

G. Pataut, Nathalie Labat, Nathalie Malbert, 2007, Microelectron. Reliab..

Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress

D. Floriot, Hervé Blanck, Nathalie Labat, 2013, Microelectron. Reliab..