V. Nayar

发表

Determination of properties of thin thermal SiO2 on silicon by spectroscopic ellipsometry

C. Pickering, A. Hodge, V. Nayar, 1991 .

Radiation hardness of N2O grown oxynitrides assessed using the conductance technique

M. Uren, C. Anthony, V. Nayar, 1996 .

Resonant cavity longwave SiGe-Si photodetector using a buried silicide mirror

D. Robbins, R. Carline, V. Nayar, 1998, IEEE Photonics Technology Letters.

Spectroscopic ellipsometry of epitaxial Si {100} surfaces

C. Pickering, D. Robbins, A. Pidduck, 1992 .

Optical imaging of microroughness on polished silicon wafers

A. Pidduck, V. Nayar, 1991 .

Photochemical engineering of silicon dioxide

Ian W. Boyd, F. Micheli, P. Patel, 1990, Other Conferences.

Atmospheric pressure, low temperature (<500 degrees C) UV/ozone oxidation of silicon

I. Boyd, V. Nayar, P. Patel, 1990 .

Oxidation Induced Changes in the Si Surface Microroughness

C. Pickering, A. Pidduck, V. Nayar, 1991 .

Optimisation of furnace oxidation of Si with respect to negative bias stress instability

M. Uren, K. Brunson, A. Hodge, 1993 .

Interface State Capture Cross Section Measurements on Vacuum Annealed and Radiation Damaged Si : SiO2 Surfaces

E. Cartier, M. Uren, J. Stathis, 1998 .