Yong-Hua Li

O-O bonding stabilized zinc vacancy as origin of p-type doping on Σ7 ZnO grain boundary

X. Gong, Suhuai Wei, Yu-Bo Gao, 2015 .

Ab Initio All-Electron Calculation of Absolute Volume Deformation Potentials of IV-IV, III-V, and II-VI Semiconductors: The Chemical Trends

X. Gong, Yong-Hua Li, S. Wei, 2006 .

The first principle study on the atomic and electronic structure of GaN(101¯0) surface

H. Pan, Faqiang Xu, P. Xu, 2005 .

First-principles studies of the electronic and optical properties of 6H–SiC

H. Pan, Faqiang Xu, P. Xu, 2003 .

Ab initio calculation of hydrostatic absolute deformation potential of semiconductors

X. Gong, Yong-Hua Li, S. Wei, 2006 .