K. Matsushita

Properties of ZnO films prepared by MO-CVD under oxygen rich condition on sapphire substrate

Baoping Zhang, Y. Segawa, H. Watanabe, 2004 .

Homoepitaxial growth of ZnO films on ZnO ( 1 1 2̄ 0) substrates

I. Niikura, T. Kikuchi, Y. Kashiwaba, 2005 .

Achievement of low p-type carrier concentration for MOCVD growth HgCdTe without an annealing process

A. Kamata, K. Matsushita, Keitaro Shigenaka, 1998 .

Orientation dependence of HgCdTe epitaxial layers grown by MOCVD on Si substrates

Hideo Wada, M. Nagashima, M. Nagashima, 1996 .

Ferroelectric properties of sol-gel delivered epitaxial Pb(Zrx,Ti1−x)O3 thin films on Si using epitaxial γ-Al2O3 Layers

Makoto Ishida, Kazuaki Sawada, Daisuke Akai, 2005 .