Donald A. Gajewski

Reliability studies of SiC vertical power MOSFETs

Scott Allen, Akin Akturk, John W. Palmour, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).

Analysis and resolution of a thermally accelerated early life failure mechanism in a 40 V GaN FET

Donald A. Gajewski, Randall D. Lewis, Benjamin M. Decker, 2014, Microelectron. Reliab..

Reliability Performance of 1200 V and 1700 V 4H-SiC DMOSFETs for Next Generation Power Conversion Applications

Jonathan Young, John W. Palmour, Brett Hull, 2014 .

Reliability comparison of 28V-50V GaN-on-SiC S-band and X-band technologies

Simon Wood, Donald A. Gajewski, Jeff B. Barner, 2018, Microelectron. Reliab..

SiC power device reliability

Gangyao Wang, Sei-Hyung Ryu, John W. Palmour, 2016, 2016 IEEE International Integrated Reliability Workshop (IIRW).