K. Jeon

发表

Effects of enhanced lateral transport on InGaN/GaN light emitting diodes via n-type AlGaN/GaN superlattices

H. Choi, J. Joe, Jeong Soo Lee, 2013 .

Internal quantum efficiency of GaN-based light-emitting diodes grown on silicon substrates determined from rate equation analyses

H. Ryu, Jeong Soo Lee, M. Kang, 2013 .

Dependence of efficiencies in GaN-based vertical blue light-emitting diodes on the thickness and doping concentration of the n-GaN layer.

H. Ryu, Yunho Choi, Jeong‐Soo Lee, 2013, Optics express.

Relationship between threading dislocations and the optical properties in GaN-based LEDs on Si Substrates

S. W. Kim, H. Ryu, D. Ko, 2015 .

23‐4: Full Color, Active‐Matrix Micro‐LED Display with Dual Gate a‐IGZO TFT Backplane

Sungmin Park, J. Jang, Yoonho Choi, 2020 .

Analysis of below-threshold efficiency characteristics of InGaN-based blue laser diodes

Won Jun Choi, Han-Youl Ryu, H. Ryu, 2012 .

A comparative study of efficiency droop and internal electric field for InGaN blue lighting-emitting diodes on silicon and sapphire substrates

J. S. Lee, H. Ryu, J. Lee, 2017, Scientific Reports.