J. Komiyama

发表

Stress reduction in epitaxial GaN films on Si using cubic SiC as intermediate layers

Shun-ichi Suzuki, H. Nakanishi, Y. Abe, 2006 .

Schottky diode characteristics of 3C-SiC grown on a Si substrate by vapor phase epitaxy

Y. Abe, J. Komiyama, Shunichi Suzuki, 2005 .

Defect Propagation from 3C-SiC to III-Nitride

T. Egawa, H. Fujimori, A. Watanabe, 2012 .

Defect Propagation from 3C-SiC Intermediate Layers to III–Nitride Epilayers

T. Egawa, H. Fujimori, A. Watanabe, 2012 .

MOVPE of AlN-free hexagonal GaN/cubic SiC/Si heterostructures for vertical devices

A. Koukitu, H. Nakanishi, Y. Abe, 2009 .

Evaluation of Stacking Faults in Single-Crystalline 3C-SiC Films by Polarized Raman Spectroscopy

Y. Abe, J. Komiyama, N. Ohmori, 2013 .

A-Site and B-Site Charge Orderings in an s-d Level Controlled Perovskite Oxide PbCoO3.

G. Bihlmayer, Zhiwei Hu, M. Mizumaki, 2017, Journal of the American Chemical Society.

Suppression of crack generation in GaN epitaxy on Si using cubic SiC as intermediate layers

H. Nakanishi, Y. Abe, J. Komiyama, 2006 .

Characterization of Dislocations in GaN Thin Film and GaN/AlN Multilayer

H. Fujimori, Y. Abe, J. Komiyama, 2012 .

Semipolar Nitrides Grown on Si(001) Offcut Substrates with 3C-SiC Buffer Layers

T. Isshiki, A. Yoshida, H. Nakanishi, 2008 .

Determination of Aluminium Mole Fraction in AlGaN Layers of GaN-Capped AlGaN/GaN Heteroepitaxial Wafers by Ultraviolet Reflection

H. Shirai, J. Komiyama, Y. Yanase, 2013 .

HRTEM study of AlN/3C-SiC heterointerfaces grown on Si(001) and Si(211) substrates

K. Nishio, T. Isshiki, H. Nakanishi, 2008 .