J. Dazord

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High purity boron nitride thin films prepared by the PDCs route

A. Brioude, P. Miele, B. Toury, 2007 .

AFM study and optical properties of GaAsN/GaAs epilayers grown by MOVPE

H. Dumont, L. Auvray, Y. Monteil, 2000 .

Strain-induced surface morphology of slightly mismatched InxGa1−xAs films grown on vicinal (100) InP substrates

H. Dumont, L. Auvray, Y. Monteil, 1999 .

Tuning vertically stacked InAs/GaAs quantum dot properties under spacer thickness effects for 1.3 μm emission

O. Marty, L. Sfaxi, H. Maaref, 2004 .

Initial stages of InP/GaP (100) and (111)A,B grown by metal organic chemical vapor deposition

H. Maaref, H. Maaref, Y. Monteil, 1999 .

Study of surface defects on 3C–SiC films grown on Si(1 1 1) by CVD

Gabriel Ferro, T. Chassagne, G. Ferro, 2003 .

Thirty-seven years of progress in boron chemistry: The scientific contribution of Professor J. Cueilleron: Part 1. Boron and refractory borides Part 2. Molecular chemistry of boron

R. Hillel, J. Bouix, F. Thévenot, 1979 .

Sol-gel Elaboration of Porous Oxide Coatings as Interphase in SiC/SiC Ceramic Matrix Composites

S. Parola, F. Chassagneux, E. Bourgeat‐Lami, 2003 .

Hexamethyldisilane/propane versus silane/propane precursors: application to the growth of high-quality 3C–SiC on Si

G. Ferro, S. Rushworth, E. Polychroniadis, 2003 .

Comparative Studies of ‹0001› 4H-SiC Layers Grown with either Silane or HexaMethylDiSilane / Propane Precursor Systems

S. Rushworth, Y. Monteil, S. Juillaguet, 2004 .

Epitaxial Growth of 4H-SiC with Hexamethyldisilane HMDS

J. Bluet, G. Guillot, Y. Monteil, 2002 .

Potential of HMDS/C3H8 Precursor System for the Growth of State of the Art Heteroepitaxial 3C-SiC Layers on Si(100)

G. Ferro, S. Rushworth, E. Polychroniadis, 2004 .

Effect of growth parameters on the heteroepitaxy of 3C-SiC on 6H-SiC substrate by chemical vapor deposition

G. Ferro, Y. Monteil, F. Cauwet, 2006 .

N-enrichment at the GaAs1−xNx/GaAs(0 0 1) interface: microstructure and optical properties

G. Patriarche, H. Dumont, L. Auvray, 2003 .

Growth mode and effect of carrier gas on In0.53Ga0.47As/InP surface morphology grown with trimethylarsine and arsine

A. Ougazzaden, H. Dumont, L. Auvray, 1999 .

Surface morphology of InGaAs and InP materials grown with trimethylarsenic and arsine on vicinal InP substrates

Abdallah Ougazzaden, A. Ougazzaden, H. Dumont, 1999 .

Surface morphology, electrical and optical properties of In0.53Ga0.47As/InP grown by metalorganic vapor-phase epitaxy using trimethylarsine and arsine

Abdallah Ougazzaden, A. Ougazzaden, H. Dumont, 1999 .

Effect of methyl surface saturation during growth interruption sequences of metalorganic vapor-phase epitaxy of In0.53Ga0.47As using trimethylarsenic

Y. Monteil, J. Bouix, V. Souliere, 1997 .

MOVPE growth of GaAsN: surface study by AFM and optical properties

L. Grenouillet, H. Dumont, L. Auvray, 2000 .

Growth and characterization of high quality BxGa1−xAs/GaAs(0 0 1) epilayers

F. Alexandre, L. Goldstein, H. Dumont, 2003 .

Enhancement of atomic ordering in In0.53Ga0.47As/InP: a comparison between trimethylarsenic and arsine

O. Marty, H. Dumont, L. Auvray, 2004 .

Movpe Strip-Like Self-Organization of InAs Grown on InP Vicinal Surfaces

H. Dumont, L. Auvray, Y. Monteil, 2000 .

Surface segregation of boron in BxGa1−xAs/GaAs epilayers studied by x-ray photoelectron spectroscopy and atomic force microscopy

H. Dumont, Y. Monteil, J. Gentner, 2003 .

Influence of boron surface enrichment on the growth mode of BGaAs epilayers grown on GaAs by metalorganic vapour phase epitaxy

P. Rodriguez, L. Auvray, Y. Monteil, 2008 .

Origin of the OH impurity in silica preforms obtained by oxidation of SiCl4in a plasma torch

J. Bouix, A. Sartre, J. Dazord, 1984 .

Study of the 3C-SiC nucleation from a liquid phase on a C face 6H-SiC substrate

D. Chaussende, G. Ferro, P. Miele, 2009 .

Determination of Temperature and Partial Pressure by Raman Scattering Inside a CVD Reactor

J. Bouix, H. Vincent, J. Dazord, 1982 .

Nucleation of 3C–SiC on 6H–SiC from a liquid phase

G. Ferro, F. Robaut, O. Dezellus, 2007 .

Investigation of 3C-SiC(111) Homoepitaxial Growth by CVD at High Temperature

G. Ferro, F. Cauwet, V. Souliere, 2010 .

Evolution of 3C-SiC islands nucleated from a liquid phase on Si face α-SiC substrates

D. Chaussende, G. Ferro, P. Miele, 2010 .

Nature effect of the gas during high temperature treatments of 4H-SiC substrates

G. Ferro, Y. Monteil, C. Jacquier, 2003 .

Comparison between Ar and N2 for High-Temperature Treatment of 4H-SiC Substrates

G. Ferro, Y. Monteil, C. Jacquier, 2003 .

Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiC

J. Leclercq, D. Planson, M. Lazar, 2007 .

Growth Mechanism of 3C-SiC Heteroepitaxial Layers on α-SiC by VLS

G. Ferro, F. Cauwet, B. Nsouli, 2008 .

Growth and characterization of BGaAs and BInGaAs epilayers on GaAs by MOVPE

H. Dumont, L. Auvray, Y. Monteil, 2007 .