G. Nadudvari

Efficiency limiting crystal defects in monocrystalline silicon and their characterization in production

A. Szabó, J. Veirman, N. Laurent, 2018, Solar Energy Materials and Solar Cells.

Tilt angle and dose rate monitoring of low energy ion implantation processes with photomodulated reflectance measurement : AM: Advanced Metrology

Edward D. Moore, Z. Zolnai, A. Pongrácz, 2020, 2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).

Characterization Techniques for Ion-Implanted Layers in Silicon

A. Pongrácz, S. Grasso, M. Polignano, 2018, 2018 22nd International Conference on Ion Implantation Technology (IIT).

Photoluminescence for in-line buried defects detection in silicon devices

N. Laurent, D. Cseh, L. Dudás, 2017, 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO).

Single image concept for photoluminescence based emitter saturation current imaging using direct calibration by the QSS-μPCD method

Marshall Wilson, J. Lagowski, Z. Kovács, 2013, 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC).

Unified Lifetime Metrology and Photoluminescence Imaging of Passivation Defects for Silicon PV

Piotr Edelman, Valentin D. Mihailetchi, Jacek Lagowski, 2013 .

Detection and characterization of three-dimensional interconnect bonding voids by infrared microscopy

Richard A. Allen, Zoltan Kiss, Gyorgy Nadudvari, 2014 .